Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector
Thermal imaging technology is the cornerstone of military and civil technology. Two-color infrared photodetectors working in mid-wavelength infrared (MWIR, 3 μm-5 μm) and long-wavelength infrared (LWIR, 8 μm-12 μm) band receive significant attention. The excellent optoelectronic and physicochemical...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/157569 |
| _version_ | 1826129060510564352 |
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| author | Yang, Yuhui |
| author2 | Fan Weijun |
| author_facet | Fan Weijun Yang, Yuhui |
| author_sort | Yang, Yuhui |
| collection | NTU |
| description | Thermal imaging technology is the cornerstone of military and civil technology. Two-color infrared photodetectors working in mid-wavelength infrared (MWIR, 3 μm-5 μm) and long-wavelength infrared (LWIR, 8 μm-12 μm) band receive significant attention. The excellent optoelectronic and physicochemical properties make it possible for group-III nitride quantum well to fabricate two-color infrared photodetector. However, the component and well width of group-III nitride that can accomplish the two-color detection have not been investigated. In this case, this project utilizes the 8-band model, firstly calculates the transition energy from E1 to E2 and therefore finds the desired component and well width; secondly, these parameters are optimized according to Q_TE curves and Q_TM curves. Finally, Al0.1Ga0.9N/In0.3Ga0.7N (with well width 31 Å and 60 Å) is determined to be the optimal quantum wells. |
| first_indexed | 2024-10-01T07:34:34Z |
| format | Thesis-Master by Coursework |
| id | ntu-10356/157569 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:34:34Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1575692022-05-12T08:55:56Z Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector Yang, Yuhui Fan Weijun School of Electrical and Electronic Engineering EWJFan@ntu.edu.sg Engineering::Electrical and electronic engineering Thermal imaging technology is the cornerstone of military and civil technology. Two-color infrared photodetectors working in mid-wavelength infrared (MWIR, 3 μm-5 μm) and long-wavelength infrared (LWIR, 8 μm-12 μm) band receive significant attention. The excellent optoelectronic and physicochemical properties make it possible for group-III nitride quantum well to fabricate two-color infrared photodetector. However, the component and well width of group-III nitride that can accomplish the two-color detection have not been investigated. In this case, this project utilizes the 8-band model, firstly calculates the transition energy from E1 to E2 and therefore finds the desired component and well width; secondly, these parameters are optimized according to Q_TE curves and Q_TM curves. Finally, Al0.1Ga0.9N/In0.3Ga0.7N (with well width 31 Å and 60 Å) is determined to be the optimal quantum wells. Master of Science (Electronics) 2022-05-12T08:55:56Z 2022-05-12T08:55:56Z 2022 Thesis-Master by Coursework Yang, Y. (2022). Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157569 https://hdl.handle.net/10356/157569 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Yang, Yuhui Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector |
| title | Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector |
| title_full | Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector |
| title_fullStr | Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector |
| title_full_unstemmed | Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector |
| title_short | Design of A 3-5 um and 8-12 um two-color InGaN/AlGaN quantum well infrared photo-detector |
| title_sort | design of a 3 5 um and 8 12 um two color ingan algan quantum well infrared photo detector |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/157569 |
| work_keys_str_mv | AT yangyuhui designofa35umand812umtwocoloringanalganquantumwellinfraredphotodetector |