Resisitive switching devices based on halide perovskites
In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one be...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/157764 |
| _version_ | 1826112586713661440 |
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| author | Hazirah Hassan |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Hazirah Hassan |
| author_sort | Hazirah Hassan |
| collection | NTU |
| description | In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report. |
| first_indexed | 2024-10-01T03:09:30Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/157764 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:09:30Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1577642023-07-07T19:04:28Z Resisitive switching devices based on halide perovskites Hazirah Hassan Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering::Semiconductors In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report. Bachelor of Engineering (Electrical and Electronic Engineering) 2022-05-23T04:25:26Z 2022-05-23T04:25:26Z 2022 Final Year Project (FYP) Hazirah Hassan (2022). Resisitive switching devices based on halide perovskites. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157764 https://hdl.handle.net/10356/157764 en A2014-211 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Hazirah Hassan Resisitive switching devices based on halide perovskites |
| title | Resisitive switching devices based on halide perovskites |
| title_full | Resisitive switching devices based on halide perovskites |
| title_fullStr | Resisitive switching devices based on halide perovskites |
| title_full_unstemmed | Resisitive switching devices based on halide perovskites |
| title_short | Resisitive switching devices based on halide perovskites |
| title_sort | resisitive switching devices based on halide perovskites |
| topic | Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/157764 |
| work_keys_str_mv | AT hazirahhassan resisitiveswitchingdevicesbasedonhalideperovskites |