Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices
In power converters, short-circuit faults are the most common cause of failure. Short-Circuit (SC) detection and protection methods have been developed for silicon (Si) devices, such as Si Insulated Gate Bipolar Transistors (IGBT) or Si Metal Oxide Field Effect Transistors (MOSFET). The emergen...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/158097 |
| _version_ | 1811690434846523392 |
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| author | Goh, Sheue Ling |
| author2 | Wong Kin Shun, Terence |
| author_facet | Wong Kin Shun, Terence Goh, Sheue Ling |
| author_sort | Goh, Sheue Ling |
| collection | NTU |
| description | In power converters, short-circuit faults are the most common cause of failure.
Short-Circuit (SC) detection and protection methods have been developed for silicon (Si)
devices, such as Si Insulated Gate Bipolar Transistors (IGBT) or Si Metal Oxide Field
Effect Transistors (MOSFET). The emergence of Wide Bandgap (WBG) devices such as
Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) High Electron Mobility
Transistors (HEMT) brought the need of new protection methods.
The Rogowski coil is an old current measuring device. Over the course of a century, it has
been tweaked and enhanced, and it is constantly being researched for new applications.
Compared to ordinary magnetic current transformers (CTs), the Rogowski coil has several
advantages. Rogowski Coils can readily replace traditional CTs in protection, metering,
control applications and can be usable at any voltage. Rogowski Coils, on the other hand,
produce output voltage that is a scaled time derivative di(t)/dt of the primary current,
unlike CTs that produce secondary current proportional to the primary current.
This paper seeks to explore the benefits of Printed Circuit Board (PCB)- embedded
Rogowski switch- current sensors incorporated on the gate driver. |
| first_indexed | 2024-10-01T06:03:56Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/158097 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:03:56Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1580972023-07-07T19:30:29Z Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices Goh, Sheue Ling Wong Kin Shun, Terence School of Electrical and Electronic Engineering EKSWONG@ntu.edu.sg Engineering::Electrical and electronic engineering In power converters, short-circuit faults are the most common cause of failure. Short-Circuit (SC) detection and protection methods have been developed for silicon (Si) devices, such as Si Insulated Gate Bipolar Transistors (IGBT) or Si Metal Oxide Field Effect Transistors (MOSFET). The emergence of Wide Bandgap (WBG) devices such as Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) brought the need of new protection methods. The Rogowski coil is an old current measuring device. Over the course of a century, it has been tweaked and enhanced, and it is constantly being researched for new applications. Compared to ordinary magnetic current transformers (CTs), the Rogowski coil has several advantages. Rogowski Coils can readily replace traditional CTs in protection, metering, control applications and can be usable at any voltage. Rogowski Coils, on the other hand, produce output voltage that is a scaled time derivative di(t)/dt of the primary current, unlike CTs that produce secondary current proportional to the primary current. This paper seeks to explore the benefits of Printed Circuit Board (PCB)- embedded Rogowski switch- current sensors incorporated on the gate driver. Bachelor of Engineering (Electrical and Electronic Engineering) 2022-05-29T12:07:53Z 2022-05-29T12:07:53Z 2022 Final Year Project (FYP) Goh, S. L. (2022). Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/158097 https://hdl.handle.net/10356/158097 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Goh, Sheue Ling Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices |
| title | Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices |
| title_full | Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices |
| title_fullStr | Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices |
| title_full_unstemmed | Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices |
| title_short | Design and development of gate driver for short circuit fault detection in wide bandgap (WBG) devices |
| title_sort | design and development of gate driver for short circuit fault detection in wide bandgap wbg devices |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/158097 |
| work_keys_str_mv | AT gohsheueling designanddevelopmentofgatedriverforshortcircuitfaultdetectioninwidebandgapwbgdevices |