GaN converter demonstrator
In today’s fast-paced society, innovation is one of the key aspects to technological development. Companies are always striving toward improving their efficiency in order to lower costs and keep up with consumers’ ever-changing needs and wants. In the field of semiconductors, Gallium Nitride (GaN) h...
Main Author: | Villarama, Joseph Christian Aguilar |
---|---|
Other Authors: | Josep Pou |
Format: | Final Year Project (FYP) |
Language: | English |
Published: |
Nanyang Technological University
2022
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/158649 |
Similar Items
-
Development of GaN-based aerospace converter
by: Heng, Wei De
Published: (2023) -
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014) -
Design of a GaN-based power converter
by: Pek, Jonas
Published: (2021) -
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013) -
Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
by: Whiteside, Matthew, et al.
Published: (2021)