Reactive sputtering of CoZrTaOx thin films
As a novel metal oxide material with promising electrical properties, CoZrTaOx (OCZT) requires precise control of conditons in the reactive sputtering process to ensure that deposited thin films demonstrate stable and favorable qualities. As the properties of OCZT thin films to process conditions is...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/159239 |
| _version_ | 1826115342649262080 |
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| author | Zheng, Cheng |
| author2 | Gan Chee Lip |
| author_facet | Gan Chee Lip Zheng, Cheng |
| author_sort | Zheng, Cheng |
| collection | NTU |
| description | As a novel metal oxide material with promising electrical properties, CoZrTaOx (OCZT) requires precise control of conditons in the reactive sputtering process to ensure that deposited thin films demonstrate stable and favorable qualities. As the properties of OCZT thin films to process conditions is not well explored, this report aims to study the effects of annealing, Ar/O2 gas flow and target condition on the microstructure and film properties of OCZT thin films. TEM, SAD and XRD are used to characterize the grains of OCZT thin films, while EDX and ToF-SIMS results are analyzed to understand the change in elemental and compound compositions with varying process conditions. Transport of atoms is discussed as the mechanism for crystallization of OCZT thin films. Heat supplied during annealing serves as the driving force for oxygen atoms to overcome kinetic barriers and form metal-oxide compounds. Berg model is reviewed and modified to explain the hysteresis phenomenon in transition sputtering mode. OCZT thin films deposited at transition mode display disparate electrical and mechanical properties. The results of this report suggest that Ar/O2 is a necessary control in the reactive sputtering of metal oxide thin films as it imposes profound impact on deposition rate, film compostions and properties. |
| first_indexed | 2024-10-01T03:53:54Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/159239 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:53:54Z |
| publishDate | 2022 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1592392022-06-15T02:13:27Z Reactive sputtering of CoZrTaOx thin films Zheng, Cheng Gan Chee Lip School of Materials Science and Engineering Wu Mengxue CLGan@ntu.edu.sg Engineering::Materials As a novel metal oxide material with promising electrical properties, CoZrTaOx (OCZT) requires precise control of conditons in the reactive sputtering process to ensure that deposited thin films demonstrate stable and favorable qualities. As the properties of OCZT thin films to process conditions is not well explored, this report aims to study the effects of annealing, Ar/O2 gas flow and target condition on the microstructure and film properties of OCZT thin films. TEM, SAD and XRD are used to characterize the grains of OCZT thin films, while EDX and ToF-SIMS results are analyzed to understand the change in elemental and compound compositions with varying process conditions. Transport of atoms is discussed as the mechanism for crystallization of OCZT thin films. Heat supplied during annealing serves as the driving force for oxygen atoms to overcome kinetic barriers and form metal-oxide compounds. Berg model is reviewed and modified to explain the hysteresis phenomenon in transition sputtering mode. OCZT thin films deposited at transition mode display disparate electrical and mechanical properties. The results of this report suggest that Ar/O2 is a necessary control in the reactive sputtering of metal oxide thin films as it imposes profound impact on deposition rate, film compostions and properties. Bachelor of Engineering (Materials Engineering) 2022-06-15T01:49:53Z 2022-06-15T01:49:53Z 2022 Final Year Project (FYP) Zheng, C. (2022). Reactive sputtering of CoZrTaOx thin films. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/159239 https://hdl.handle.net/10356/159239 en MSE/21/133 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Materials Zheng, Cheng Reactive sputtering of CoZrTaOx thin films |
| title | Reactive sputtering of CoZrTaOx thin films |
| title_full | Reactive sputtering of CoZrTaOx thin films |
| title_fullStr | Reactive sputtering of CoZrTaOx thin films |
| title_full_unstemmed | Reactive sputtering of CoZrTaOx thin films |
| title_short | Reactive sputtering of CoZrTaOx thin films |
| title_sort | reactive sputtering of cozrtaox thin films |
| topic | Engineering::Materials |
| url | https://hdl.handle.net/10356/159239 |
| work_keys_str_mv | AT zhengcheng reactivesputteringofcozrtaoxthinfilms |