Measurement and error analysis of Cu film thickness with Ta barrier layer on wafer for CMP application
Accurate thickness measurement of copper (Cu) film on silicon (Si)-based wafers is very important in the chemical mechanical polishing (CMP) process. For thickness measurement of Cu film, the eddy current method is widely adopted due to noncontact, high-efficiency, and high-accuracy characteristics....
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/159502 |