Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors
Two-dimensional tungsten disulfide (WS2), as one of the widely concerned members of the transition metal dichalcogenides family, has been studied broadly by its outstanding photonic and electronic properties. Since all of the research works focus on size and the number of layers, the dendritic struc...
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/159790 |
| _version_ | 1826117931125178368 |
|---|---|
| author | Zhan, Li Shen, Jun Yan, Jiangbing Yan, Ruiyang Zhang, Xiaoxian Long, Mingsheng Liu, Zheng Wang, Xu Fu, Shaohua Zhang, Li Cui, Hengqing Zhang, Xin |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Zhan, Li Shen, Jun Yan, Jiangbing Yan, Ruiyang Zhang, Xiaoxian Long, Mingsheng Liu, Zheng Wang, Xu Fu, Shaohua Zhang, Li Cui, Hengqing Zhang, Xin |
| author_sort | Zhan, Li |
| collection | NTU |
| description | Two-dimensional tungsten disulfide (WS2), as one of the widely concerned members of the transition metal dichalcogenides family, has been studied broadly by its outstanding photonic and electronic properties. Since all of the research works focus on size and the number of layers, the dendritic structure WS2 has been scarcely reported. In our study, we make use of atmospheric pressure chemical vapor deposition (APCVD) to control the synthesis of dendritic WS2/monolayer WS2 heterostructures on the SiO2/Si substrate. The stacking morphology of the heterostructure is verified by AFM, Raman, and PL spectra. The effects of growth times and carrier gas flux on the quasi-epitaxial growth of WS2 films with dendritic structures have been systematically studied. In addition, the transition between fractal, dendritic, and compact morphologies with the increase of the growth times (carrier gas flux) are more significant. The compact morphology and difference of contact potential between the adjacent dendritic structures are characterized by Kelvin probe force microscopy (KPFM). Moreover, the as-fabricated FET devices exhibit excellent electronic properties (on/off ratio, carrier mobility, photoresponsivity, and response time are about 106, 11.42 cm2 V-1S1-, 46.6 mA/W, and 105.5 μs, respectively). This study paves the way for the rational design of high-sensitivity fractal-enhanced phototransistor devices for industrial and commercial applications. |
| first_indexed | 2024-10-01T04:35:26Z |
| format | Journal Article |
| id | ntu-10356/159790 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:35:26Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1597902022-07-02T12:56:15Z Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors Zhan, Li Shen, Jun Yan, Jiangbing Yan, Ruiyang Zhang, Xiaoxian Long, Mingsheng Liu, Zheng Wang, Xu Fu, Shaohua Zhang, Li Cui, Hengqing Zhang, Xin School of Materials Science and Engineering Center for Programmable Materials Engineering::Materials Dendritic WS2 2D Materials Two-dimensional tungsten disulfide (WS2), as one of the widely concerned members of the transition metal dichalcogenides family, has been studied broadly by its outstanding photonic and electronic properties. Since all of the research works focus on size and the number of layers, the dendritic structure WS2 has been scarcely reported. In our study, we make use of atmospheric pressure chemical vapor deposition (APCVD) to control the synthesis of dendritic WS2/monolayer WS2 heterostructures on the SiO2/Si substrate. The stacking morphology of the heterostructure is verified by AFM, Raman, and PL spectra. The effects of growth times and carrier gas flux on the quasi-epitaxial growth of WS2 films with dendritic structures have been systematically studied. In addition, the transition between fractal, dendritic, and compact morphologies with the increase of the growth times (carrier gas flux) are more significant. The compact morphology and difference of contact potential between the adjacent dendritic structures are characterized by Kelvin probe force microscopy (KPFM). Moreover, the as-fabricated FET devices exhibit excellent electronic properties (on/off ratio, carrier mobility, photoresponsivity, and response time are about 106, 11.42 cm2 V-1S1-, 46.6 mA/W, and 105.5 μs, respectively). This study paves the way for the rational design of high-sensitivity fractal-enhanced phototransistor devices for industrial and commercial applications. The authors are grateful for the financial support from the Science and Technology Service Network Initiative of the Chinese Academy of Sciences (Nos. KFJ-STS-QYZD-179 and KFJ-STS-QYZD-123), State Key Laboratory of Luminescence and Applications (NO. SKLA-2021-03), and commercial research funds (No. Y79H030). 2022-07-02T12:56:15Z 2022-07-02T12:56:15Z 2021 Journal Article Zhan, L., Shen, J., Yan, J., Yan, R., Zhang, X., Long, M., Liu, Z., Wang, X., Fu, S., Zhang, L., Cui, H. & Zhang, X. (2021). Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors. ACS Applied Nano Material, 4(10), 11097-11104. https://dx.doi.org/10.1021/acsanm.1c02568 2574-0970 https://hdl.handle.net/10356/159790 10.1021/acsanm.1c02568 2-s2.0-85116188602 10 4 11097 11104 en ACS Applied Nano Material © 2021 American Chemical Society. All rights reserved. |
| spellingShingle | Engineering::Materials Dendritic WS2 2D Materials Zhan, Li Shen, Jun Yan, Jiangbing Yan, Ruiyang Zhang, Xiaoxian Long, Mingsheng Liu, Zheng Wang, Xu Fu, Shaohua Zhang, Li Cui, Hengqing Zhang, Xin Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors |
| title | Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors |
| title_full | Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors |
| title_fullStr | Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors |
| title_full_unstemmed | Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors |
| title_short | Dendritic WS₂ nanocrystal-coated monolayer WS₂ nanosheet heterostructures for phototransistors |
| title_sort | dendritic ws₂ nanocrystal coated monolayer ws₂ nanosheet heterostructures for phototransistors |
| topic | Engineering::Materials Dendritic WS2 2D Materials |
| url | https://hdl.handle.net/10356/159790 |
| work_keys_str_mv | AT zhanli dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT shenjun dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT yanjiangbing dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT yanruiyang dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT zhangxiaoxian dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT longmingsheng dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT liuzheng dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT wangxu dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT fushaohua dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT zhangli dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT cuihengqing dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors AT zhangxin dendriticws2nanocrystalcoatedmonolayerws2nanosheetheterostructuresforphototransistors |