Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration
Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale high-speed and high-capacity applications.However, the phase noise/timing jitter of such light sources are normally high, which restricts their applications. A simple and low-cost chip-scale solution to address...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/159840 |
| _version_ | 1811679847255113728 |
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| author | Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Guo, Xin Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Wang, Hong Liu, Chongyang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Guo, Xin Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Wang, Hong Liu, Chongyang |
| author_sort | Li, Xiang |
| collection | NTU |
| description | Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale high-speed and high-capacity applications.However, the phase noise/timing jitter of such light sources are normally high, which restricts their applications. A simple and low-cost chip-scale solution to address this issue is highly desired. In this work, a two-section GaSb-based passively mode-locked laser (MLL) emitting in the 2 m wavelength band with a fundamental repetition frequency of 13.35 GHzis presented.Dramatic phase noise reduction is achieved through its hybrid integration with a silicon photonic circuit which provides chip-scale optical feedback to the MLL.Under a fixed laser bias condition, more than 50 improvement of radio frequency linewidth to sub-kilohertz level is realized by carefully adjusting the feedback strength (via a p-i-n junction-based variable optical attenuator) and optical length of the feedback loop (via integrated heater on the silicon waveguide). The phase noise reaches 113 dBc=Hz at 1 MHz offset with integrated timing jitters of 274 fs (100 kHz to 100 MHz) and 123 fs (4 to 80 MHz). At the same time, the pulse-To-pulse jitter reaches as low as 7.8 fs/cycle. These values are record low for 2 m passively mode-locked semiconductor lasers. Our results prove the feasibility of MLL noise reduction with the chip-scale hybrid III-V/silicon integration method, bringing low-noise light sources to the silicon platform. Moreover, this work also suggests the potential miniaturization of various other functional setups with the same method. |
| first_indexed | 2024-10-01T03:15:39Z |
| format | Journal Article |
| id | ntu-10356/159840 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:15:39Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1598402022-07-16T20:12:02Z Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Guo, Xin Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Wang, Hong Liu, Chongyang School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering Quantum-Dot Lasers Transmission Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale high-speed and high-capacity applications.However, the phase noise/timing jitter of such light sources are normally high, which restricts their applications. A simple and low-cost chip-scale solution to address this issue is highly desired. In this work, a two-section GaSb-based passively mode-locked laser (MLL) emitting in the 2 m wavelength band with a fundamental repetition frequency of 13.35 GHzis presented.Dramatic phase noise reduction is achieved through its hybrid integration with a silicon photonic circuit which provides chip-scale optical feedback to the MLL.Under a fixed laser bias condition, more than 50 improvement of radio frequency linewidth to sub-kilohertz level is realized by carefully adjusting the feedback strength (via a p-i-n junction-based variable optical attenuator) and optical length of the feedback loop (via integrated heater on the silicon waveguide). The phase noise reaches 113 dBc=Hz at 1 MHz offset with integrated timing jitters of 274 fs (100 kHz to 100 MHz) and 123 fs (4 to 80 MHz). At the same time, the pulse-To-pulse jitter reaches as low as 7.8 fs/cycle. These values are record low for 2 m passively mode-locked semiconductor lasers. Our results prove the feasibility of MLL noise reduction with the chip-scale hybrid III-V/silicon integration method, bringing low-noise light sources to the silicon platform. Moreover, this work also suggests the potential miniaturization of various other functional setups with the same method. National Research Foundation (NRF) Published version National Research Foundation Singapore (NRF-CRP12-201304); National Natural Science Foundation of China (61790583, 61964007); Key-Area Research and Development Program of Guangdong Province (2020B0303020001). 2022-07-04T06:22:54Z 2022-07-04T06:22:54Z 2021 Journal Article Li, X., Sia, B. J. X., Wang, W., Qiao, Z., Guo, X., Ng, G. I., Zhang, Y., Niu, Z., Tong, C., Wang, H. & Liu, C. (2021). Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration. Optica, 8(6), 855-860. https://dx.doi.org/10.1364/OPTICA.416007 2334-2536 https://hdl.handle.net/10356/159840 10.1364/OPTICA.416007 2-s2.0-85108413161 6 8 855 860 en NRF-CRP12-2013-04 Optica © 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Quantum-Dot Lasers Transmission Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Qiao, Zhongliang Guo, Xin Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Wang, Hong Liu, Chongyang Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration |
| title | Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration |
| title_full | Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration |
| title_fullStr | Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration |
| title_full_unstemmed | Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration |
| title_short | Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration |
| title_sort | phase noise reduction of a 2 μm passively mode locked laser through hybrid iii v silicon integration |
| topic | Engineering::Electrical and electronic engineering Quantum-Dot Lasers Transmission |
| url | https://hdl.handle.net/10356/159840 |
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