Growth and characterization of PECVD growth CNTs and CNT networks
Aligned carbon nanotubes (ACNTs) were prepared by Plasma Enhance Chemical Vapor Deposition (PECVD). Acetylene (C2H2) was used as the carbon feedstock gas. The effects of temperature, pressure, processing gas flow rate and growth time on the growth of ACNTs using Nickel and Gold/Nickel as the catalys...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/16001 |
| _version_ | 1811697579923079168 |
|---|---|
| author | Tay, Roland Yingjie. |
| author2 | Tay Beng Kang |
| author_facet | Tay Beng Kang Tay, Roland Yingjie. |
| author_sort | Tay, Roland Yingjie. |
| collection | NTU |
| description | Aligned carbon nanotubes (ACNTs) were prepared by Plasma Enhance Chemical Vapor Deposition (PECVD). Acetylene (C2H2) was used as the carbon feedstock gas. The effects of temperature, pressure, processing gas flow rate and growth time on the growth of ACNTs using Nickel and Gold/Nickel as the catalyst on N++, P++, SiO2 and undoped substrates were systematically studied. For the catalysts of ACNTs growth, Nickel with 30nm in thickness and Gold with 50nm on top of Nickel with 30nm thickness were deposited onto the silicon substrates. Growth of ACNTs were monitored using SEM and its quality by Raman spectroscopy.
The ACNTs were then used to grow networks which were prepared by PECVD. The samples were inverted and placed onto the stage. The effects of temperature, pressure, processing gas flow rate and growth time on the density of the networks were examined using SEM and analysis of its quality were done by Raman spectroscopy.
Surface wettability characterization was done using goniometer to measure the contact angle of the DI water droplet. SEM images and Raman spectra results were use to observe the surface morphology and the quality of the CNTs. |
| first_indexed | 2024-10-01T07:57:31Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/16001 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:57:31Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/160012023-07-07T17:50:58Z Growth and characterization of PECVD growth CNTs and CNT networks Tay, Roland Yingjie. Tay Beng Kang School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Aligned carbon nanotubes (ACNTs) were prepared by Plasma Enhance Chemical Vapor Deposition (PECVD). Acetylene (C2H2) was used as the carbon feedstock gas. The effects of temperature, pressure, processing gas flow rate and growth time on the growth of ACNTs using Nickel and Gold/Nickel as the catalyst on N++, P++, SiO2 and undoped substrates were systematically studied. For the catalysts of ACNTs growth, Nickel with 30nm in thickness and Gold with 50nm on top of Nickel with 30nm thickness were deposited onto the silicon substrates. Growth of ACNTs were monitored using SEM and its quality by Raman spectroscopy. The ACNTs were then used to grow networks which were prepared by PECVD. The samples were inverted and placed onto the stage. The effects of temperature, pressure, processing gas flow rate and growth time on the density of the networks were examined using SEM and analysis of its quality were done by Raman spectroscopy. Surface wettability characterization was done using goniometer to measure the contact angle of the DI water droplet. SEM images and Raman spectra results were use to observe the surface morphology and the quality of the CNTs. Bachelor of Engineering 2009-05-20T01:55:57Z 2009-05-20T01:55:57Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/16001 en Nanyang Technological University 144 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Tay, Roland Yingjie. Growth and characterization of PECVD growth CNTs and CNT networks |
| title | Growth and characterization of PECVD growth CNTs and CNT networks |
| title_full | Growth and characterization of PECVD growth CNTs and CNT networks |
| title_fullStr | Growth and characterization of PECVD growth CNTs and CNT networks |
| title_full_unstemmed | Growth and characterization of PECVD growth CNTs and CNT networks |
| title_short | Growth and characterization of PECVD growth CNTs and CNT networks |
| title_sort | growth and characterization of pecvd growth cnts and cnt networks |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | http://hdl.handle.net/10356/16001 |
| work_keys_str_mv | AT tayrolandyingjie growthandcharacterizationofpecvdgrowthcntsandcntnetworks |