Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂
Heterostructures for charge-carrier manipulation have laid the foundation of modern optoelectronic devices, such as photovoltaics and photodetectors. High-performance heterostructure devices usually impose stringent requirements on the material quality to sustain efficient carrier transport and char...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Online Access: | https://hdl.handle.net/10356/160245 |
| _version_ | 1826122076870672384 |
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| author | Wen, Wen Zhang, Wenbin Wang, Xiaojian Feng, Qingliang Liu, Zheng Yu, Ting |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Wen, Wen Zhang, Wenbin Wang, Xiaojian Feng, Qingliang Liu, Zheng Yu, Ting |
| author_sort | Wen, Wen |
| collection | NTU |
| description | Heterostructures for charge-carrier manipulation have laid the foundation of modern optoelectronic devices, such as photovoltaics and photodetectors. High-performance heterostructure devices usually impose stringent requirements on the material quality to sustain efficient carrier transport and charge transfer, thus leading to sophisticated fabrication processes. Here, a simple yet efficient strategy is proposed to develop ultrasensitive photodetectors based on heterostructures of chemical vapor deposition-grown MoS2 and polycrystalline-layered perovskites. The layered perovskites possess pure crystallographic orientation with conductive edges in contact with MoS2 , which gives rise to efficient light absorption, exciton diffusion, and interfacial charge transfer. In dark state, the mismatch of work functions of two materials facilitates low dark currents by the depletion of electrons in MoS2 . Under light irradiation, efficient exciton diffusion and interfacial charge transfer are realized in the heterostructures with type-II band alignment, which produces drifting electrons in MoS2 and leaves trapped holes in layered perovskites. The photodetectors present suppress noises and boost photocurrents, yielding a champion device with a responsivity of 2.5 × 104 A W-1 , and a specific detectivity of 4.1 × 1014 Jones. The results demonstrate a scalable approach for the integration of high-performance devices with high tolerance to defects. |
| first_indexed | 2024-10-01T05:42:36Z |
| format | Journal Article |
| id | ntu-10356/160245 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:42:36Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1602452022-07-18T05:13:55Z Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ Wen, Wen Zhang, Wenbin Wang, Xiaojian Feng, Qingliang Liu, Zheng Yu, Ting School of Physical and Mathematical Sciences School of Materials Science and Engineering Engineering::Materials Heterostructures Layered Perovskites Heterostructures for charge-carrier manipulation have laid the foundation of modern optoelectronic devices, such as photovoltaics and photodetectors. High-performance heterostructure devices usually impose stringent requirements on the material quality to sustain efficient carrier transport and charge transfer, thus leading to sophisticated fabrication processes. Here, a simple yet efficient strategy is proposed to develop ultrasensitive photodetectors based on heterostructures of chemical vapor deposition-grown MoS2 and polycrystalline-layered perovskites. The layered perovskites possess pure crystallographic orientation with conductive edges in contact with MoS2 , which gives rise to efficient light absorption, exciton diffusion, and interfacial charge transfer. In dark state, the mismatch of work functions of two materials facilitates low dark currents by the depletion of electrons in MoS2 . Under light irradiation, efficient exciton diffusion and interfacial charge transfer are realized in the heterostructures with type-II band alignment, which produces drifting electrons in MoS2 and leaves trapped holes in layered perovskites. The photodetectors present suppress noises and boost photocurrents, yielding a champion device with a responsivity of 2.5 × 104 A W-1 , and a specific detectivity of 4.1 × 1014 Jones. The results demonstrate a scalable approach for the integration of high-performance devices with high tolerance to defects. Ministry of Education (MOE) National Research Foundation (NRF) This work was supported by the Ministry of Education of Singapore (MOE MOE2018-T2-2-072). This work was supported by the Academic Research Fund Tier 1 (RG93/19). This work was supported by the Singapore National Research Foundation (NRF) under the Competitive Research Programs (NRF-CRP-21-2018-0007). 2022-07-18T05:13:55Z 2022-07-18T05:13:55Z 2021 Journal Article Wen, W., Zhang, W., Wang, X., Feng, Q., Liu, Z. & Yu, T. (2021). Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂. Small, 17(36), 2102461-. https://dx.doi.org/10.1002/smll.202102461 1613-6810 https://hdl.handle.net/10356/160245 10.1002/smll.202102461 34313386 2-s2.0-85111118525 36 17 2102461 en MOE2018-T2-2-072 RG93/19 NRF-CRP-21-2018-0007 Small © 2021 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering::Materials Heterostructures Layered Perovskites Wen, Wen Zhang, Wenbin Wang, Xiaojian Feng, Qingliang Liu, Zheng Yu, Ting Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ |
| title | Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ |
| title_full | Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ |
| title_fullStr | Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ |
| title_full_unstemmed | Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ |
| title_short | Ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition-grown MoS₂ |
| title_sort | ultrasensitive photodetectors promoted by interfacial charge transfer from layered perovskites to chemical vapor deposition grown mos₂ |
| topic | Engineering::Materials Heterostructures Layered Perovskites |
| url | https://hdl.handle.net/10356/160245 |
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