Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band
The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ(2))....
| Үндсэн зохиолчид: | , , , , , , , , , , , , , |
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| Бусад зохиолчид: | |
| Формат: | Journal Article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2022
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://hdl.handle.net/10356/160344 |
| _version_ | 1826110990930935808 |
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| author | Sia, Brian Jia Xu Li, Xiang Wang, Jiawei Wang, Wanjun Qiao, Zhongliang Guo, Xin Lee, Chee Wei Sasidharan, Ashesh Gunasagar, S. Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Ang, Kian Siong Wang, Hong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sia, Brian Jia Xu Li, Xiang Wang, Jiawei Wang, Wanjun Qiao, Zhongliang Guo, Xin Lee, Chee Wei Sasidharan, Ashesh Gunasagar, S. Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Ang, Kian Siong Wang, Hong |
| author_sort | Sia, Brian Jia Xu |
| collection | NTU |
| description | The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ(2)). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek. |
| first_indexed | 2024-10-01T02:43:36Z |
| format | Journal Article |
| id | ntu-10356/160344 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:43:36Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1603442022-07-23T20:11:52Z Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band Sia, Brian Jia Xu Li, Xiang Wang, Jiawei Wang, Wanjun Qiao, Zhongliang Guo, Xin Lee, Chee Wei Sasidharan, Ashesh Gunasagar, S. Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Ang, Kian Siong Wang, Hong School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering Modulator Photodetector The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ(2)). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek. Nanyang Technological University National Research Foundation (NRF) Published version This work was supported in part by the NTU-CompoundTek Research Collaboration Agreement under Grant RCA #020263-00001 and in part by the National Research Foundation of Singapore under Grant NRFCRP12-2013-04. 2022-07-19T08:05:03Z 2022-07-19T08:05:03Z 2022 Journal Article Sia, B. J. X., Li, X., Wang, J., Wang, W., Qiao, Z., Guo, X., Lee, C. W., Sasidharan, A., Gunasagar, S., Littlejohns, C. G., Liu, C., Reed, G. T., Ang, K. S. & Wang, H. (2022). Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band. IEEE Photonics Journal, 14(3), 6628609-. https://dx.doi.org/10.1109/JPHOT.2022.3170366 1943-0655 https://hdl.handle.net/10356/160344 10.1109/JPHOT.2022.3170366 2-s2.0-85129587985 3 14 6628609 en RCA #020263-00001 NRFCRP12-2013-04 IEEE Photonics Journal © 2022 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Modulator Photodetector Sia, Brian Jia Xu Li, Xiang Wang, Jiawei Wang, Wanjun Qiao, Zhongliang Guo, Xin Lee, Chee Wei Sasidharan, Ashesh Gunasagar, S. Littlejohns, Callum G. Liu, Chongyang Reed, Graham T. Ang, Kian Siong Wang, Hong Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band |
| title | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band |
| title_full | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band |
| title_fullStr | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band |
| title_full_unstemmed | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band |
| title_short | Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band |
| title_sort | wafer scale demonstration of low loss ∼0 43 db cm high bandwidth 38 ghz silicon photonics platform operating at the c band |
| topic | Engineering::Electrical and electronic engineering Modulator Photodetector |
| url | https://hdl.handle.net/10356/160344 |
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