Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide
Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstr...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/160432 |
| _version_ | 1811682377114583040 |
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| author | Qiao, Zhongliang Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Wang, Hong Li, Zaijin Zhao, Zhibin Li, Lin Gao, Xin Bo, Baoxue Qu, Yi Liu, Guojin Liu, Chongyang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Qiao, Zhongliang Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Wang, Hong Li, Zaijin Zhao, Zhibin Li, Lin Gao, Xin Bo, Baoxue Qu, Yi Liu, Guojin Liu, Chongyang |
| author_sort | Qiao, Zhongliang |
| collection | NTU |
| description | Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the modal gain characteristics of the MLL. |
| first_indexed | 2024-10-01T03:55:52Z |
| format | Journal Article |
| id | ntu-10356/160432 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:55:52Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1604322022-07-23T20:11:53Z Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide Qiao, Zhongliang Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Wang, Hong Li, Zaijin Zhao, Zhibin Li, Lin Gao, Xin Bo, Baoxue Qu, Yi Liu, Guojin Liu, Chongyang School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering Quantum Well Lasers Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (Va) as well as the injection current of gain section (Ig), were investigated by the Hakki-Paoli method. With the increase of Va, the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that Va had an obvious effect on the modal gain characteristics of the MLL. National Research Foundation (NRF) Published version The authors would like to thank for supported in part by Hainan Province Key R&D Program Project (ZDYF2020036), National Natural Science Foundation of China (Nos. 61964007/61774024/61864002/620640 04/62174046), National Research Foundation of Singapore (NRF-CRP12-2013-04), Hainan Provincial Natural Science Foundation of China (No. 2018CXTD336), National Key R&D Project (No. 2017 YFB0405100), Jilin province science and technology development plan (20190302007GX). 2022-07-22T02:33:18Z 2022-07-22T02:33:18Z 2022 Journal Article Qiao, Z., Li, X., Sia, B. J. X., Wang, W., Wang, H., Li, Z., Zhao, Z., Li, L., Gao, X., Bo, B., Qu, Y., Liu, G. & Liu, C. (2022). Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide. Scientific Reports, 12(1), 5010-. https://dx.doi.org/10.1038/s41598-022-09136-6 2045-2322 https://hdl.handle.net/10356/160432 10.1038/s41598-022-09136-6 35322141 2-s2.0-85127135598 1 12 5010 en NRF-CRP12-2013-04 Scientific Reports © 2022 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Quantum Well Lasers Qiao, Zhongliang Li, Xiang Sia, Brian Jia Xu Wang, Wanjun Wang, Hong Li, Zaijin Zhao, Zhibin Li, Lin Gao, Xin Bo, Baoxue Qu, Yi Liu, Guojin Liu, Chongyang Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide |
| title | Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide |
| title_full | Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide |
| title_fullStr | Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide |
| title_full_unstemmed | Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide |
| title_short | Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide |
| title_sort | modal gain characteristics of a two section ingaas gaas double quantum well passively mode locked laser with asymmetric waveguide |
| topic | Engineering::Electrical and electronic engineering Quantum Well Lasers |
| url | https://hdl.handle.net/10356/160432 |
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