Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstr...

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Bibliographic Details
Main Authors: Qiao, Zhongliang, Li, Xiang, Sia, Brian Jia Xu, Wang, Wanjun, Wang, Hong, Li, Zaijin, Zhao, Zhibin, Li, Lin, Gao, Xin, Bo, Baoxue, Qu, Yi, Liu, Guojin, Liu, Chongyang
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Quantum Well
Lasers
Online Access:https://hdl.handle.net/10356/160432

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