Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes
Due to the breakneck switching speed, SiC mosfet is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC mosfet, and it poses an unsolved challenge for the ind...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/160919 |
| _version_ | 1811686879771230208 |
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| author | Zeng, Zheng Zhang, Xin Blaabjerg, Frede Miao, Linjing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zeng, Zheng Zhang, Xin Blaabjerg, Frede Miao, Linjing |
| author_sort | Zeng, Zheng |
| collection | NTU |
| description | Due to the breakneck switching speed, SiC mosfet is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC mosfet, and it poses an unsolved challenge for the industrial field. This paper focuses to uncover the transient instability mechanism of SiC mosfet intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC mosfet associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC mosfet influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC mosfet intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC mosfet. Due to the deteriorated stability margin of SiC mosfet intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC mosfet. |
| first_indexed | 2024-10-01T05:07:26Z |
| format | Journal Article |
| id | ntu-10356/160919 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:07:26Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1609192022-08-08T01:11:13Z Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes Zeng, Zheng Zhang, Xin Blaabjerg, Frede Miao, Linjing School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Impedance Modeling Measurement Probes Due to the breakneck switching speed, SiC mosfet is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC mosfet, and it poses an unsolved challenge for the industrial field. This paper focuses to uncover the transient instability mechanism of SiC mosfet intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC mosfet associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC mosfet influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC mosfet intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC mosfet. Due to the deteriorated stability margin of SiC mosfet intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC mosfet. Ministry of Education (MOE) Nanyang Technological University This work was supported in part by the National Natural Science Foundation of China under Grant 51607016, in part by the National Key Research and Development Program of China under Grant 2017YFB0102303, in part by Singapore ACRF Tier 1 Grant RG 85/18, and in part by the NTU Startup Grant (SCOPES) for Prof Zhang Xin. 2022-08-08T01:11:13Z 2022-08-08T01:11:13Z 2019 Journal Article Zeng, Z., Zhang, X., Blaabjerg, F. & Miao, L. (2019). Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes. IEEE Transactions On Power Electronics, 35(2), 1866-1881. https://dx.doi.org/10.1109/TPEL.2019.2922246 0885-8993 https://hdl.handle.net/10356/160919 10.1109/TPEL.2019.2922246 2-s2.0-85075616281 2 35 1866 1881 en RG 85/18 IEEE Transactions on Power Electronics © 2019 IEEE. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Impedance Modeling Measurement Probes Zeng, Zheng Zhang, Xin Blaabjerg, Frede Miao, Linjing Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes |
| title | Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes |
| title_full | Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes |
| title_fullStr | Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes |
| title_full_unstemmed | Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes |
| title_short | Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes |
| title_sort | impedance oriented transient instability modeling of sic mosfet intruded by measurement probes |
| topic | Engineering::Electrical and electronic engineering Impedance Modeling Measurement Probes |
| url | https://hdl.handle.net/10356/160919 |
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