Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes

Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes

Due to the breakneck switching speed, SiC mosfet is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC mosfet, and it poses an unsolved challenge for the ind...

Full description

Bibliographic Details
Main Authors: Zeng, Zheng, Zhang, Xin, Blaabjerg, Frede, Miao, Linjing
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Impedance Modeling
Measurement Probes
Online Access:https://hdl.handle.net/10356/160919

Similar Items

Similar Items