Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect
Two-dimensional materials that are intrinsically ferromagnetic are crucial for the development of compact spintronic devices. However, most non-layered 2D magnets with a strong ferromagnetic order are difficult to synthesize. Here we show that the flakes of trigonal and monoclinic Cr5Te8 can be grow...
| Main Authors: | , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/161710 |
| _version_ | 1826123981274480640 |
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| author | Tang, Bijun Wang, Xiaowei Han, Mengjiao Xu, Xiaodong Zhang, Zhaowei Zhu, Chao Cao, Xun Yang, Yumeng Fu, Qundong Yang, Jianqun Li, Xingji Gao, Weibo Zhou, Jiadong Lin, Junhao Liu, Zheng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Tang, Bijun Wang, Xiaowei Han, Mengjiao Xu, Xiaodong Zhang, Zhaowei Zhu, Chao Cao, Xun Yang, Yumeng Fu, Qundong Yang, Jianqun Li, Xingji Gao, Weibo Zhou, Jiadong Lin, Junhao Liu, Zheng |
| author_sort | Tang, Bijun |
| collection | NTU |
| description | Two-dimensional materials that are intrinsically ferromagnetic are crucial for the development of compact spintronic devices. However, most non-layered 2D magnets with a strong ferromagnetic order are difficult to synthesize. Here we show that the flakes of trigonal and monoclinic Cr5Te8 can be grown via a chemical vapour deposition method. Using magneto-optical and magnetotransport measurements, we show that both phases exhibit robust ferromagnetism with strong perpendicular anisotropy at thicknesses of a few nanometres. A high Curie temperature of up to 200 K can be obtained by manipulating the phase structure and thickness. We also observe a colossal anomalous Hall effect in the more structurally distorted monoclinic Cr5Te8, with an anomalous Hall conductivity of 650 Ω−1 cm−1 and anomalous Hall angle of 5%. |
| first_indexed | 2024-10-01T06:13:31Z |
| format | Journal Article |
| id | ntu-10356/161710 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:13:31Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1617102023-02-28T20:09:06Z Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect Tang, Bijun Wang, Xiaowei Han, Mengjiao Xu, Xiaodong Zhang, Zhaowei Zhu, Chao Cao, Xun Yang, Yumeng Fu, Qundong Yang, Jianqun Li, Xingji Gao, Weibo Zhou, Jiadong Lin, Junhao Liu, Zheng School of Materials Science and Engineering School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering CNRS International NTU THALES Research Alliances Engineering::Materials::Magnetic materials Engineering::Materials::Microelectronics and semiconductor materials::Thin films 2D Materials Hall Effect Two-dimensional materials that are intrinsically ferromagnetic are crucial for the development of compact spintronic devices. However, most non-layered 2D magnets with a strong ferromagnetic order are difficult to synthesize. Here we show that the flakes of trigonal and monoclinic Cr5Te8 can be grown via a chemical vapour deposition method. Using magneto-optical and magnetotransport measurements, we show that both phases exhibit robust ferromagnetism with strong perpendicular anisotropy at thicknesses of a few nanometres. A high Curie temperature of up to 200 K can be obtained by manipulating the phase structure and thickness. We also observe a colossal anomalous Hall effect in the more structurally distorted monoclinic Cr5Te8, with an anomalous Hall conductivity of 650 Ω−1 cm−1 and anomalous Hall angle of 5%. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version Z.L. acknowledges support from the National Research Foundation Singapore (NRF-CRP22-2019-0007 and NRF-CRP21-2018-0007). This research is also supported by the Ministry of Education, Singapore, under its AcRF Tier 3 Programme ‘Geometrical Quantum Materials’ (MOE2018-T3-1-002), and AcRF Tier 1 RG161/19. W.G. acknowledges support from the National Research Foundation Singapore (NRF-CRP22-2019-0004). J.L. acknowledges support from the National Natural Science Foundation of China (grant no. 11974156); Guangdong International Science Collaboration Project (grant no. 2019A050510001); Guangdong Innovative and Entrepreneurial Research Team Program (grant no. 2019ZT08C044); Shenzhen Science and Technology Program (no. KQTD20190929173815000 and 20200925161102001); the Science, Technology and Innovation Commission of Shenzhen Municipality (no. ZDSYS20190902092905285); and assistance of SUSTech Core Research Facilities, especially technical support from the Pico-Centre that receives support from the Presidential fund and Development and Reform Commission of Shenzhen Municipality. J.Z. acknowledges support from the Beijing Institute of Technology (grant no. 2021CX11013) and National Natural Science Foundation of China (grant no. 62174013). 2022-09-16T06:37:22Z 2022-09-16T06:37:22Z 2022 Journal Article Tang, B., Wang, X., Han, M., Xu, X., Zhang, Z., Zhu, C., Cao, X., Yang, Y., Fu, Q., Yang, J., Li, X., Gao, W., Zhou, J., Lin, J. & Liu, Z. (2022). Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect. Nature Electronics, 5(4), 224-232. https://dx.doi.org/10.1038/s41928-022-00754-6 2520-1131 https://hdl.handle.net/10356/161710 10.1038/s41928-022-00754-6 2-s2.0-85128928419 4 5 224 232 en NRF-CRP22-2019-0007 NRF-CRP21-2018-0007 MOE2018-T3-1-002 NRF-CRP22-2019-0004 RG161/19 Nature Electronics © 2022 The Author(s), under exclusive licence to Springer Nature Limited. All rights reserved. This paper was published in Nature Electronics and is made available with permission of The Author(s). application/pdf |
| spellingShingle | Engineering::Materials::Magnetic materials Engineering::Materials::Microelectronics and semiconductor materials::Thin films 2D Materials Hall Effect Tang, Bijun Wang, Xiaowei Han, Mengjiao Xu, Xiaodong Zhang, Zhaowei Zhu, Chao Cao, Xun Yang, Yumeng Fu, Qundong Yang, Jianqun Li, Xingji Gao, Weibo Zhou, Jiadong Lin, Junhao Liu, Zheng Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect |
| title | Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect |
| title_full | Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect |
| title_fullStr | Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect |
| title_full_unstemmed | Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect |
| title_short | Phase engineering of Cr₅Te₈ with colossal anomalous Hall effect |
| title_sort | phase engineering of cr₅te₈ with colossal anomalous hall effect |
| topic | Engineering::Materials::Magnetic materials Engineering::Materials::Microelectronics and semiconductor materials::Thin films 2D Materials Hall Effect |
| url | https://hdl.handle.net/10356/161710 |
| work_keys_str_mv | AT tangbijun phaseengineeringofcr5te8withcolossalanomaloushalleffect AT wangxiaowei phaseengineeringofcr5te8withcolossalanomaloushalleffect AT hanmengjiao phaseengineeringofcr5te8withcolossalanomaloushalleffect AT xuxiaodong phaseengineeringofcr5te8withcolossalanomaloushalleffect AT zhangzhaowei phaseengineeringofcr5te8withcolossalanomaloushalleffect AT zhuchao phaseengineeringofcr5te8withcolossalanomaloushalleffect AT caoxun phaseengineeringofcr5te8withcolossalanomaloushalleffect AT yangyumeng phaseengineeringofcr5te8withcolossalanomaloushalleffect AT fuqundong phaseengineeringofcr5te8withcolossalanomaloushalleffect AT yangjianqun phaseengineeringofcr5te8withcolossalanomaloushalleffect AT lixingji phaseengineeringofcr5te8withcolossalanomaloushalleffect AT gaoweibo phaseengineeringofcr5te8withcolossalanomaloushalleffect AT zhoujiadong phaseengineeringofcr5te8withcolossalanomaloushalleffect AT linjunhao phaseengineeringofcr5te8withcolossalanomaloushalleffect AT liuzheng phaseengineeringofcr5te8withcolossalanomaloushalleffect |