Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों:	Clark, Oliver J., Wadgaonkar, Indrajit, Freyse, Friedrich, Springholz, Gunther, Battiato, Marco, Sánchez-Barriga, Jaime
अन्य लेखक:	School of Physical and Mathematical Sciences
स्वरूप:	Journal Article
भाषा:	English
प्रकाशित:	2022
विषय:	Science::Physics Ferroelectric Semiconductors Rashba Effect
ऑनलाइन पहुंच:	https://hdl.handle.net/10356/162066

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