Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules

As a novel two-dimensional (2D) semiconductor material with biocompatibility and ferromagnetic properties, Nb3Cl8 exhibits a great prospect in the field of implantable electrical equipment. In this work, the effects of the light illumination and the gate voltage on the desorption of O2 molecules...

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Main Authors: Chen, Jiangang, Cao, Gui-Ming, Liu, Qing, Meng, Peng, Liu, Zheng, Liu, Fu-Cai
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2022
Subjects:
Online Access:https://hdl.handle.net/10356/162392
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author Chen, Jiangang
Cao, Gui-Ming
Liu, Qing
Meng, Peng
Liu, Zheng
Liu, Fu-Cai
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Chen, Jiangang
Cao, Gui-Ming
Liu, Qing
Meng, Peng
Liu, Zheng
Liu, Fu-Cai
author_sort Chen, Jiangang
collection NTU
description As a novel two-dimensional (2D) semiconductor material with biocompatibility and ferromagnetic properties, Nb3Cl8 exhibits a great prospect in the field of implantable electrical equipment. In this work, the effects of the light illumination and the gate voltage on the desorption of O2 molecules from Nb3Cl8 were systemically investigated via the in situ electrical transport characterization in the vacuum environment. The experimental results showed that the light illumination and the negative gate voltage could enhance the desorption of oxygen molecules while the positive gate voltage could promote the re-adsorption of O2. The multi-bit storage function was demonstrated via adjusting the p-doping effect caused by oxygen adsorption. A novel mechanism of optical writing and electrical erasing in this Nb3Cl8 memristor was proposed, which was in coincidence with the expected results of the control experiment in air. These results shed light on the great potential of Nb3Cl8 in high-density data storage, neuromorphic, wearable applications and implantable devices application.
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spelling ntu-10356/1623922023-04-05T07:12:19Z Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules Chen, Jiangang Cao, Gui-Ming Liu, Qing Meng, Peng Liu, Zheng Liu, Fu-Cai School of Materials Science and Engineering Engineering::Materials Oxygen Molecules As a novel two-dimensional (2D) semiconductor material with biocompatibility and ferromagnetic properties, Nb3Cl8 exhibits a great prospect in the field of implantable electrical equipment. In this work, the effects of the light illumination and the gate voltage on the desorption of O2 molecules from Nb3Cl8 were systemically investigated via the in situ electrical transport characterization in the vacuum environment. The experimental results showed that the light illumination and the negative gate voltage could enhance the desorption of oxygen molecules while the positive gate voltage could promote the re-adsorption of O2. The multi-bit storage function was demonstrated via adjusting the p-doping effect caused by oxygen adsorption. A novel mechanism of optical writing and electrical erasing in this Nb3Cl8 memristor was proposed, which was in coincidence with the expected results of the control experiment in air. These results shed light on the great potential of Nb3Cl8 in high-density data storage, neuromorphic, wearable applications and implantable devices application. This work was financially supported by the National Natural Science Foundation of China (Nos. 62074025 and 52002051), the Applied Basic Research Program of Sichuan Province (No. 2020ZYD014), Sichuan Province Key Laboratory of Display Science and Technology, Postdoctoral Innovative Talent Supporting Program (No. BX20190060), China Postdoctoral Science Foundation (No. 2019M663463) and the Fundamental Research Funds for the Central Universities, SCUT (No. ZYGX2020J009). 2022-10-17T08:39:45Z 2022-10-17T08:39:45Z 2022 Journal Article Chen, J., Cao, G., Liu, Q., Meng, P., Liu, Z. & Liu, F. (2022). Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules. Rare Metals, 41(1), 325-332. https://dx.doi.org/10.1007/s12598-021-01794-1 1001-0521 https://hdl.handle.net/10356/162392 10.1007/s12598-021-01794-1 2-s2.0-85110623678 1 41 325 332 en Rare Metals © 2021 Youke Publishing Co., Ltd. All rights reserved.
spellingShingle Engineering::Materials
Oxygen Molecules
Chen, Jiangang
Cao, Gui-Ming
Liu, Qing
Meng, Peng
Liu, Zheng
Liu, Fu-Cai
Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules
title Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules
title_full Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules
title_fullStr Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules
title_full_unstemmed Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules
title_short Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules
title_sort two dimensional nb3cl8 memristor based on desorption and adsorption of o2 molecules
topic Engineering::Materials
Oxygen Molecules
url https://hdl.handle.net/10356/162392
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