Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density
Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits their integration into practical applications. While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers, the effect of defect...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/162404 |
| _version_ | 1811692046707064832 |
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| author | Jung, Yongduck Burt, Daniel Zhang, Lin Kim, Youngmin Joo, Hyo-Jun Chen, Melvina Assali, Simone Moutanabbir, Oussama Tan, Chuan Seng Nam, Donguk |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jung, Yongduck Burt, Daniel Zhang, Lin Kim, Youngmin Joo, Hyo-Jun Chen, Melvina Assali, Simone Moutanabbir, Oussama Tan, Chuan Seng Nam, Donguk |
| author_sort | Jung, Yongduck |
| collection | NTU |
| description | Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits their integration into practical applications. While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers, the effect of defects on the lasing threshold has not been well studied yet. Herein, we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly. We first present a method of obtaining high-quality GeSn-on-insulator layers using low-temperature direct bonding and chemical–mechanical polishing. Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by ∼10 times and ∼6 times, respectively. Our result presents a new path towards pushing the performance of GeSn lasers to the limit. |
| first_indexed | 2024-10-01T06:29:34Z |
| format | Journal Article |
| id | ntu-10356/162404 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:29:34Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1624042022-10-18T02:26:50Z Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density Jung, Yongduck Burt, Daniel Zhang, Lin Kim, Youngmin Joo, Hyo-Jun Chen, Melvina Assali, Simone Moutanabbir, Oussama Tan, Chuan Seng Nam, Donguk School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Defects Density Infrared-Laser Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits their integration into practical applications. While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers, the effect of defects on the lasing threshold has not been well studied yet. Herein, we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly. We first present a method of obtaining high-quality GeSn-on-insulator layers using low-temperature direct bonding and chemical–mechanical polishing. Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by ∼10 times and ∼6 times, respectively. Our result presents a new path towards pushing the performance of GeSn lasers to the limit. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) Mitacs; Innovation for Defence Excellence and Security, IDEaS; PRIMA Québec; Canada Foundation for Innovation; Canada Research Chairs; Natural Sciences and Engineering Research Council of Canada; iGrant of Singapore A*STAR (AME IRG (A2083c0053)); National Research Foundation Singapore (Competitive Research Program (NRF-CRP19-2017-01), NRF-ANR Joint Grant (NRF2018-NRF-ANR009 TIGER)); Ministry of Education - Singapore (AcRF TIER 1 2019-T1-002-050 (RG 148/19 (S)), AcRF TIER 2 (MOE2018-T2-2-011 (S)), AcRF Tier 2 (T2EP50121-0001 (MOE-000180-01)). 2022-10-18T02:26:50Z 2022-10-18T02:26:50Z 2022 Journal Article Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S. & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 1332-1337. https://dx.doi.org/10.1364/PRJ.455443 2327-9125 https://hdl.handle.net/10356/162404 10.1364/PRJ.455443 2-s2.0-85130946415 6 10 1332 1337 en A2083c0053 NRF-CRP19- 2017-01 NRF2018-NRF-ANR009 TIGER 2019-T1- 002-050 [RG 148/19 (S)] MOE2018-T2-2-011 (S) T2EP50121-0001 (MOE-000180-01) Photonics Research © 2022 Chinese Laser Press. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Defects Density Infrared-Laser Jung, Yongduck Burt, Daniel Zhang, Lin Kim, Youngmin Joo, Hyo-Jun Chen, Melvina Assali, Simone Moutanabbir, Oussama Tan, Chuan Seng Nam, Donguk Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density |
| title | Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density |
| title_full | Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density |
| title_fullStr | Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density |
| title_full_unstemmed | Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density |
| title_short | Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density |
| title_sort | optically pumped low threshold microdisk lasers on a gesn on insulator substrate with reduced defect density |
| topic | Engineering::Electrical and electronic engineering Defects Density Infrared-Laser |
| url | https://hdl.handle.net/10356/162404 |
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