Room-temperature nonvolatile molecular memory based on partially unzipped nanotube
Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications. In this work, a molecular wire made of seamless junctions between semi...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/162492 |
| _version_ | 1826125718447194112 |
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| author | Peng, Zhisheng Deng, Ya Wei, Haonan Peng, Kang Liu, Hui Jin, Jiyou Wang, Zhongpu Chu, Weiguo Zhang, Jian Li, Yong Jun Liu, Zheng Sun, Liangfeng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Peng, Zhisheng Deng, Ya Wei, Haonan Peng, Kang Liu, Hui Jin, Jiyou Wang, Zhongpu Chu, Weiguo Zhang, Jian Li, Yong Jun Liu, Zheng Sun, Liangfeng |
| author_sort | Peng, Zhisheng |
| collection | NTU |
| description | Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications. In this work, a molecular wire made of seamless junctions between semiconducting single-walled carbon nanotubes (SWNT) and partially unzipped segments of the SWNTs are reported. This novel nanostructure is demonstrated to be a nonvolatile memory, which works at room temperature under atmospheric conditions. The characteristics of the device are measured with a four-terminal configuration and a non-local voltage (Vnon-local) is used as the storage signal. An electrical hysteresis of Vnon-local is observed, wherein two states with different Vnon-local can be switched by the application of an electric field through an insulating gate device structure, exhibiting nonvolatile characteristics. Vnon-local can be modulated with external magnetic fields and the mechanism of the electrical hysteresis is attributed to the magnetic moments at the partially unzipped SWNT. The smaller size of SWNT and high working temperature may lead to the development of molecular nanomagnets as nonvolatile memory devices for practical applications. |
| first_indexed | 2024-10-01T06:40:55Z |
| format | Journal Article |
| id | ntu-10356/162492 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:40:55Z |
| publishDate | 2022 |
| record_format | dspace |
| spelling | ntu-10356/1624922022-10-25T05:59:25Z Room-temperature nonvolatile molecular memory based on partially unzipped nanotube Peng, Zhisheng Deng, Ya Wei, Haonan Peng, Kang Liu, Hui Jin, Jiyou Wang, Zhongpu Chu, Weiguo Zhang, Jian Li, Yong Jun Liu, Zheng Sun, Liangfeng School of Materials Science and Engineering Engineering::Materials Molecular Magnets Non-Local Signals Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications. In this work, a molecular wire made of seamless junctions between semiconducting single-walled carbon nanotubes (SWNT) and partially unzipped segments of the SWNTs are reported. This novel nanostructure is demonstrated to be a nonvolatile memory, which works at room temperature under atmospheric conditions. The characteristics of the device are measured with a four-terminal configuration and a non-local voltage (Vnon-local) is used as the storage signal. An electrical hysteresis of Vnon-local is observed, wherein two states with different Vnon-local can be switched by the application of an electric field through an insulating gate device structure, exhibiting nonvolatile characteristics. Vnon-local can be modulated with external magnetic fields and the mechanism of the electrical hysteresis is attributed to the magnetic moments at the partially unzipped SWNT. The smaller size of SWNT and high working temperature may lead to the development of molecular nanomagnets as nonvolatile memory devices for practical applications. Supported by Major Nanoprojects of Ministry of Science and Technology of China (Grant Nos.2018YFA0208403, 2017YFA0207104), National Natural Science Foundation of China (21973021, 11874129), the GBA National Institute for Nanotechnology Innovation, Guangdong, China (2020B0101020003), CAS Project for Young Scientists in Basic Research (YSBR-030), Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB36000000, NBSDC-DB-18). 2022-10-25T05:59:24Z 2022-10-25T05:59:24Z 2022 Journal Article Peng, Z., Deng, Y., Wei, H., Peng, K., Liu, H., Jin, J., Wang, Z., Chu, W., Zhang, J., Li, Y. J., Liu, Z. & Sun, L. (2022). Room-temperature nonvolatile molecular memory based on partially unzipped nanotube. Advanced Functional Materials, 32(11), 2107224-. https://dx.doi.org/10.1002/adfm.202107224 1616-301X https://hdl.handle.net/10356/162492 10.1002/adfm.202107224 2-s2.0-85120181800 11 32 2107224 en Advanced Functional Materials © 2021 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering::Materials Molecular Magnets Non-Local Signals Peng, Zhisheng Deng, Ya Wei, Haonan Peng, Kang Liu, Hui Jin, Jiyou Wang, Zhongpu Chu, Weiguo Zhang, Jian Li, Yong Jun Liu, Zheng Sun, Liangfeng Room-temperature nonvolatile molecular memory based on partially unzipped nanotube |
| title | Room-temperature nonvolatile molecular memory based on partially unzipped nanotube |
| title_full | Room-temperature nonvolatile molecular memory based on partially unzipped nanotube |
| title_fullStr | Room-temperature nonvolatile molecular memory based on partially unzipped nanotube |
| title_full_unstemmed | Room-temperature nonvolatile molecular memory based on partially unzipped nanotube |
| title_short | Room-temperature nonvolatile molecular memory based on partially unzipped nanotube |
| title_sort | room temperature nonvolatile molecular memory based on partially unzipped nanotube |
| topic | Engineering::Materials Molecular Magnets Non-Local Signals |
| url | https://hdl.handle.net/10356/162492 |
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