Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures
Ferroelectric van der Waals (vdW) heterostructure have recently emerged as a low-power, versatile device paradigm because it combines the great diversity of the 2D materials and the memory nature of ferroelectrics. The non-volatile field effect generated by the polarization bound charge is the pivot...
Main Authors: | , , , , , , , , , , , , , , |
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Format: | Journal Article |
Language: | English |
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2022
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Online Access: | https://hdl.handle.net/10356/163291 |
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author | Li, Ping Chaturvedi, Apoorva Zhou, Hailin Zhang, Gaojun Li, Qiankun Xue, Jinshuo Zhou, Ziwen Wang, Shun Zhou, Kun Weng, Yuyan Zheng, Fengang Shi, Zhenwu Teo, Edwin Hang Tong Fang, Liang You, Lu |
author2 | School of Materials Science and Engineering |
author_facet | School of Materials Science and Engineering Li, Ping Chaturvedi, Apoorva Zhou, Hailin Zhang, Gaojun Li, Qiankun Xue, Jinshuo Zhou, Ziwen Wang, Shun Zhou, Kun Weng, Yuyan Zheng, Fengang Shi, Zhenwu Teo, Edwin Hang Tong Fang, Liang You, Lu |
author_sort | Li, Ping |
collection | NTU |
description | Ferroelectric van der Waals (vdW) heterostructure have recently emerged as a low-power, versatile device paradigm because it combines the great diversity of the 2D materials and the memory nature of ferroelectrics. The non-volatile field effect generated by the polarization bound charge is the pivotal factor for the device's performance. Unfortunately, microscopic studies on the interplay between polarization switching and electrostatic coupling at the heterojunction remain largely overlooked. Herein, the authors investigate the electrostatic coupling phenomena of vdW heterostructures consisting of semiconducting MoS2 and ferroelectric CuInP2S6. Significant charge injection accompanying the polarization reversal appears to be the governing field effect that modulates the electronic and photoluminescent properties of MoS2, as revealed by correlated ferroelectric domain, surface potential, and photoluminescence microscopies. Conversely, the photoactivity of the MoS2 also affects the polarization stability of CuInP2S6. This work provides direct microscopic insight into the mutual electrostatic interactions in vdW ferroelectric-semiconductor heterojunctions, which has broad implications for ferroelectric field-effect applications. |
first_indexed | 2024-10-01T07:54:53Z |
format | Journal Article |
id | ntu-10356/163291 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:54:53Z |
publishDate | 2022 |
record_format | dspace |
spelling | ntu-10356/1632912022-11-30T06:11:50Z Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures Li, Ping Chaturvedi, Apoorva Zhou, Hailin Zhang, Gaojun Li, Qiankun Xue, Jinshuo Zhou, Ziwen Wang, Shun Zhou, Kun Weng, Yuyan Zheng, Fengang Shi, Zhenwu Teo, Edwin Hang Tong Fang, Liang You, Lu School of Materials Science and Engineering School of Electrical and Electronic Engineering Engineering::Materials Ferroelectric Field-Effect Photoluminescence Ferroelectric van der Waals (vdW) heterostructure have recently emerged as a low-power, versatile device paradigm because it combines the great diversity of the 2D materials and the memory nature of ferroelectrics. The non-volatile field effect generated by the polarization bound charge is the pivotal factor for the device's performance. Unfortunately, microscopic studies on the interplay between polarization switching and electrostatic coupling at the heterojunction remain largely overlooked. Herein, the authors investigate the electrostatic coupling phenomena of vdW heterostructures consisting of semiconducting MoS2 and ferroelectric CuInP2S6. Significant charge injection accompanying the polarization reversal appears to be the governing field effect that modulates the electronic and photoluminescent properties of MoS2, as revealed by correlated ferroelectric domain, surface potential, and photoluminescence microscopies. Conversely, the photoactivity of the MoS2 also affects the polarization stability of CuInP2S6. This work provides direct microscopic insight into the mutual electrostatic interactions in vdW ferroelectric-semiconductor heterojunctions, which has broad implications for ferroelectric field-effect applications. This work was supported by the National Natural Science Foundation of China (No. 12074278), the Natural Science Foundation of the Jiangsu Higher Education Institution of China (20KJA140001), and the Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions. L.Y. acknowledges the startup funds from Soochow University and Jiangsu Specially-Appointed Professors Program. 2022-11-30T06:11:50Z 2022-11-30T06:11:50Z 2022 Journal Article Li, P., Chaturvedi, A., Zhou, H., Zhang, G., Li, Q., Xue, J., Zhou, Z., Wang, S., Zhou, K., Weng, Y., Zheng, F., Shi, Z., Teo, E. H. T., Fang, L. & You, L. (2022). Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures. Advanced Functional Materials, 32(29), 2201359-. https://dx.doi.org/10.1002/adfm.202201359 1616-301X https://hdl.handle.net/10356/163291 10.1002/adfm.202201359 2-s2.0-85128787039 29 32 2201359 en Advanced Functional Materials © 2022 Wiley-VCH GmbH. All rights reserved. |
spellingShingle | Engineering::Materials Ferroelectric Field-Effect Photoluminescence Li, Ping Chaturvedi, Apoorva Zhou, Hailin Zhang, Gaojun Li, Qiankun Xue, Jinshuo Zhou, Ziwen Wang, Shun Zhou, Kun Weng, Yuyan Zheng, Fengang Shi, Zhenwu Teo, Edwin Hang Tong Fang, Liang You, Lu Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures |
title | Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures |
title_full | Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures |
title_fullStr | Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures |
title_full_unstemmed | Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures |
title_short | Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures |
title_sort | electrostatic coupling in mos₂ cuinp₂s₆ ferroelectric vdw heterostructures |
topic | Engineering::Materials Ferroelectric Field-Effect Photoluminescence |
url | https://hdl.handle.net/10356/163291 |
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