A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end
This paper presents a compact on-chip balun with a turn ratio of 1:2, and its application for sub-6 GHz wideband front-end. The common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imb...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/164068 |
| _version_ | 1824455737968951296 |
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| author | Yang, Geliang Tang, Kai Wang, Zhigong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yang, Geliang Tang, Kai Wang, Zhigong |
| author_sort | Yang, Geliang |
| collection | NTU |
| description | This paper presents a compact on-chip balun with a turn ratio of 1:2, and its application for sub-6 GHz wideband front-end. The common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. A 2.0-to-3.7 GHz wideband RF front-end is also designed by using the proposed CMOS balun. The balun and RF front-end are fabricated by using a standard 0.13-μm CMOS technology. The bandwidth of the proposed balun for |S11|<-10 dB is 2.2–5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8–5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz. |
| first_indexed | 2025-02-19T03:42:58Z |
| format | Journal Article |
| id | ntu-10356/164068 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:42:58Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1640682023-01-04T02:24:55Z A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end Yang, Geliang Tang, Kai Wang, Zhigong School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Balun Transmission Line This paper presents a compact on-chip balun with a turn ratio of 1:2, and its application for sub-6 GHz wideband front-end. The common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. A 2.0-to-3.7 GHz wideband RF front-end is also designed by using the proposed CMOS balun. The balun and RF front-end are fabricated by using a standard 0.13-μm CMOS technology. The bandwidth of the proposed balun for |S11|<-10 dB is 2.2–5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8–5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz. This work was supported by the S&T program of Hebei under No. 18960202D. 2023-01-04T02:24:55Z 2023-01-04T02:24:55Z 2022 Journal Article Yang, G., Tang, K. & Wang, Z. (2022). A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end. Microelectronics Journal, 125, 105465-. https://dx.doi.org/10.1016/j.mejo.2022.105465 0026-2692 https://hdl.handle.net/10356/164068 10.1016/j.mejo.2022.105465 2-s2.0-85130199200 125 105465 en Microelectronics Journal © 2022 Elsevier Ltd. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Balun Transmission Line Yang, Geliang Tang, Kai Wang, Zhigong A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end |
| title | A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end |
| title_full | A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end |
| title_fullStr | A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end |
| title_full_unstemmed | A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end |
| title_short | A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end |
| title_sort | cmos balun with common ground and artificial dielectric compensations applied in a wideband rf front end |
| topic | Engineering::Electrical and electronic engineering Balun Transmission Line |
| url | https://hdl.handle.net/10356/164068 |
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