Strain-induced large injection current in twisted bilayer graphene
The electronic wavefunctions in moir\'e materials are highly sensitive to the details of the local atomic configuration enabling Bloch band geometry and topology to be controlled by stacking and strain. Here we predict that large injection currents (under circular polarized irradiation) can dev...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/164241 |
| _version_ | 1826117633441792000 |
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| author | Arora, Arpit Kong, Jian Feng Song, Justin Chien Wen |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Arora, Arpit Kong, Jian Feng Song, Justin Chien Wen |
| author_sort | Arora, Arpit |
| collection | NTU |
| description | The electronic wavefunctions in moir\'e materials are highly sensitive to the details of the local atomic configuration enabling Bloch band geometry and topology to be controlled by stacking and strain. Here we predict that large injection currents (under circular polarized irradiation) can develop in strained twisted bilayer graphene (TBG) heterostructures with broken sublattice symmetry; such bulk photovoltaic currents flow even in the absence of a p-n
junction and can be controlled by the helicity of incident light. As we argue, large injection current rates proceed from strong and highly peaked interband Berry curvature dipole distributions (arising from the texturing of Bloch wavefunctions in strained TBG heterostructures). Strikingly, we find that TBG injection current displays pronounced responses in the THz regime and can be tuned by chemical potential. These render injection currents a useful photocurrent probe of symmetry breaking in TBG heterostructures and make TBG a
promising material for THz technology. |
| first_indexed | 2024-10-01T04:30:31Z |
| format | Journal Article |
| id | ntu-10356/164241 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:30:31Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1642412023-02-28T20:10:29Z Strain-induced large injection current in twisted bilayer graphene Arora, Arpit Kong, Jian Feng Song, Justin Chien Wen School of Physical and Mathematical Sciences Science::Physics Atomic Configuration Bilayer Graphene The electronic wavefunctions in moir\'e materials are highly sensitive to the details of the local atomic configuration enabling Bloch band geometry and topology to be controlled by stacking and strain. Here we predict that large injection currents (under circular polarized irradiation) can develop in strained twisted bilayer graphene (TBG) heterostructures with broken sublattice symmetry; such bulk photovoltaic currents flow even in the absence of a p-n junction and can be controlled by the helicity of incident light. As we argue, large injection current rates proceed from strong and highly peaked interband Berry curvature dipole distributions (arising from the texturing of Bloch wavefunctions in strained TBG heterostructures). Strikingly, we find that TBG injection current displays pronounced responses in the THz regime and can be tuned by chemical potential. These render injection currents a useful photocurrent probe of symmetry breaking in TBG heterostructures and make TBG a promising material for THz technology. Ministry of Education (MOE) Nanyang Technological University Published version This work was supported by Singapore MOE Academic Research Fund Tier 3 Grant No. MOE2018-T3-1-002 and a Nanyang Technological University start-up grant (NTU-SUG). 2023-01-11T02:57:33Z 2023-01-11T02:57:33Z 2021 Journal Article Arora, A., Kong, J. F. & Song, J. C. W. (2021). Strain-induced large injection current in twisted bilayer graphene. Physical Review B, 104(24), L241404-1-L241404-5. https://dx.doi.org/10.1103/PhysRevB.104.L241404 1098-0121 https://hdl.handle.net/10356/164241 10.1103/PhysRevB.104.L241404 2-s2.0-85122036062 24 104 L241404-1 L241404-5 en MOE2018-T3-1-002 NTU-SUG Physical Review B 10.21979/N9/5MIHFH © 2021 American Physical Society. All rights reserved. This paper was published in Physical Review B and is made available with permission of American Physical Society. application/pdf |
| spellingShingle | Science::Physics Atomic Configuration Bilayer Graphene Arora, Arpit Kong, Jian Feng Song, Justin Chien Wen Strain-induced large injection current in twisted bilayer graphene |
| title | Strain-induced large injection current in twisted bilayer graphene |
| title_full | Strain-induced large injection current in twisted bilayer graphene |
| title_fullStr | Strain-induced large injection current in twisted bilayer graphene |
| title_full_unstemmed | Strain-induced large injection current in twisted bilayer graphene |
| title_short | Strain-induced large injection current in twisted bilayer graphene |
| title_sort | strain induced large injection current in twisted bilayer graphene |
| topic | Science::Physics Atomic Configuration Bilayer Graphene |
| url | https://hdl.handle.net/10356/164241 |
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