Current-induced self-switching of perpendicular magnetization in CoPt single layer
All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been obse...
| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/164483 |
| _version_ | 1811685749113749504 |
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| author | Liu, Liang Zhou, Chenghang Zhao, Tieyang Yao, Bingqing Zhou, Jing Shu, Xinyu Chen, Shaohai Shi, Shu Xi, Shibo Lan, Da Lin, Weinan Xie, Qidong Ren, Lizhu Luo, Zhaoyang Sun, Chao Yang, Ping Guo, Er-Jia Dong, Zhili Manchon, Aurelien Chen, Jingsheng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Liu, Liang Zhou, Chenghang Zhao, Tieyang Yao, Bingqing Zhou, Jing Shu, Xinyu Chen, Shaohai Shi, Shu Xi, Shibo Lan, Da Lin, Weinan Xie, Qidong Ren, Lizhu Luo, Zhaoyang Sun, Chao Yang, Ping Guo, Er-Jia Dong, Zhili Manchon, Aurelien Chen, Jingsheng |
| author_sort | Liu, Liang |
| collection | NTU |
| description | All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs. |
| first_indexed | 2024-10-01T04:49:28Z |
| format | Journal Article |
| id | ntu-10356/164483 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:49:28Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1644832023-07-14T16:07:30Z Current-induced self-switching of perpendicular magnetization in CoPt single layer Liu, Liang Zhou, Chenghang Zhao, Tieyang Yao, Bingqing Zhou, Jing Shu, Xinyu Chen, Shaohai Shi, Shu Xi, Shibo Lan, Da Lin, Weinan Xie, Qidong Ren, Lizhu Luo, Zhaoyang Sun, Chao Yang, Ping Guo, Er-Jia Dong, Zhili Manchon, Aurelien Chen, Jingsheng School of Materials Science and Engineering Engineering::Materials Crystal Structure Electric Current All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) Published version The research is supported by A*STAR AME IRG A1983c0036, Singapore Ministry of Education MOE2018-T2-2-043, MOE-T2EP50121-0011, MOE2019-T2-2-075, MOE Tier 1: 22- 4888-A0001, RIE2020 Advanced Manufacturing and Engineering (AME) Programmatic Grant A20G9b0135 and Singapore National Research Foundation under CRP Award (Grant No. NRF-CRP23-2019-0070). P.Y. is supported by SSLS via NUS Core Support C380-003-003-001. 2023-01-30T02:00:11Z 2023-01-30T02:00:11Z 2022 Journal Article Liu, L., Zhou, C., Zhao, T., Yao, B., Zhou, J., Shu, X., Chen, S., Shi, S., Xi, S., Lan, D., Lin, W., Xie, Q., Ren, L., Luo, Z., Sun, C., Yang, P., Guo, E., Dong, Z., Manchon, A. & Chen, J. (2022). Current-induced self-switching of perpendicular magnetization in CoPt single layer. Nature Communications, 13(1), 3539-. https://dx.doi.org/10.1038/s41467-022-31167-w 2041-1723 https://hdl.handle.net/10356/164483 10.1038/s41467-022-31167-w 35725723 2-s2.0-85132376989 1 13 3539 en A1983c0036 MOE2018-T2-2-043 MOE-T2EP50121-0011 MOE2019-T2-2-075 MOE-T1-22- 4888-A0001 A20G9b0135 NRF-CRP23-2019-0070 Nature Communications © 2022 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/ licenses/by/4.0/. application/pdf |
| spellingShingle | Engineering::Materials Crystal Structure Electric Current Liu, Liang Zhou, Chenghang Zhao, Tieyang Yao, Bingqing Zhou, Jing Shu, Xinyu Chen, Shaohai Shi, Shu Xi, Shibo Lan, Da Lin, Weinan Xie, Qidong Ren, Lizhu Luo, Zhaoyang Sun, Chao Yang, Ping Guo, Er-Jia Dong, Zhili Manchon, Aurelien Chen, Jingsheng Current-induced self-switching of perpendicular magnetization in CoPt single layer |
| title | Current-induced self-switching of perpendicular magnetization in CoPt single layer |
| title_full | Current-induced self-switching of perpendicular magnetization in CoPt single layer |
| title_fullStr | Current-induced self-switching of perpendicular magnetization in CoPt single layer |
| title_full_unstemmed | Current-induced self-switching of perpendicular magnetization in CoPt single layer |
| title_short | Current-induced self-switching of perpendicular magnetization in CoPt single layer |
| title_sort | current induced self switching of perpendicular magnetization in copt single layer |
| topic | Engineering::Materials Crystal Structure Electric Current |
| url | https://hdl.handle.net/10356/164483 |
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