Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Realizing a tubular conduction channel within a one-dimensional core-shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition c...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/164528 |
| _version_ | 1811690597911625728 |
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| author | Wang, Xuejing Lin, Yung-Chen Tai, Chia-Tse Lee, Seok Woo Lu, Tzu-Ming Shin, Sun Hae Ra Addamane, Sadhvikas J. Sheehan, Chris Li, Jiun-Yun Kim, Yerim Yoo, Jinkyoung |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Xuejing Lin, Yung-Chen Tai, Chia-Tse Lee, Seok Woo Lu, Tzu-Ming Shin, Sun Hae Ra Addamane, Sadhvikas J. Sheehan, Chris Li, Jiun-Yun Kim, Yerim Yoo, Jinkyoung |
| author_sort | Wang, Xuejing |
| collection | NTU |
| description | Realizing a tubular conduction channel within a one-dimensional core-shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor-liquid-solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current-voltage (Id-Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design. |
| first_indexed | 2024-10-01T06:06:32Z |
| format | Journal Article |
| id | ntu-10356/164528 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:06:32Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1645282023-01-31T01:23:41Z Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure Wang, Xuejing Lin, Yung-Chen Tai, Chia-Tse Lee, Seok Woo Lu, Tzu-Ming Shin, Sun Hae Ra Addamane, Sadhvikas J. Sheehan, Chris Li, Jiun-Yun Kim, Yerim Yoo, Jinkyoung School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Chemical Vapour Deposition Conduction Channel Realizing a tubular conduction channel within a one-dimensional core-shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor-liquid-solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current-voltage (Id-Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design. Published version This research study was financially supported by the Laboratory Directed Research and Development program of Los Alamos National Laboratory (Grant No. 20200672DI). This work was performed in part at CINT, a U.S. Department of Energy, Office of Basic Energy Sciences User Facility at Los Alamos National Laboratory (Contract No. 89233218CNA000001) and Sandia National Laboratories. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under Contract No. DE-NA-0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. The work at National Taiwan University (NTU) was supported by the Ministry of Science and Technology (Grant No. 110-2622-8-002-014) and the Ministry of Education through the Higher Education Sprout Projects (NTU core consortium: 111L892002). 2023-01-31T01:23:41Z 2023-01-31T01:23:41Z 2022 Journal Article Wang, X., Lin, Y., Tai, C., Lee, S. W., Lu, T., Shin, S. H. R., Addamane, S. J., Sheehan, C., Li, J., Kim, Y. & Yoo, J. (2022). Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure. APL Materials, 10(11), 111108-. https://dx.doi.org/10.1063/5.0119654 2166-532X https://hdl.handle.net/10356/164528 10.1063/5.0119654 2-s2.0-85143201414 11 10 111108 en APL Materials © 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Chemical Vapour Deposition Conduction Channel Wang, Xuejing Lin, Yung-Chen Tai, Chia-Tse Lee, Seok Woo Lu, Tzu-Ming Shin, Sun Hae Ra Addamane, Sadhvikas J. Sheehan, Chris Li, Jiun-Yun Kim, Yerim Yoo, Jinkyoung Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_full | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_fullStr | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_full_unstemmed | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_short | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_sort | formation of tubular conduction channel in a sige p si core shell nanowire heterostructure |
| topic | Engineering::Electrical and electronic engineering Chemical Vapour Deposition Conduction Channel |
| url | https://hdl.handle.net/10356/164528 |
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