Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility
High-mobility van der Waals ambipolar semiconductors are promising in logic and reconfigurable circuits, integrated optoelectronic circuits, due to the excellent gate-controlled capability and effectively tunability of major charge carriers by electrostatic field. Controllable growth of high-quality...
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Online Access: | https://hdl.handle.net/10356/165853 |
| _version_ | 1826118288753557504 |
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| author | Xu, Manzhang Xu, Jinpeng Luo, Lei Wu, Mengqi Tang, Bijun Li, Lei Lu, Qianbo Li, Weiwei Ying, Haoting Zheng, Lu Wu, Hao Li, Qiang Jiang, Hanjun Di, Jun Zhao, Wu Zhang, Zhiyong He, Yongmin Zheng, Xiaorui Gan, Xuetao Liu, Zheng Wang, Xuewen Huang, Wei |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Xu, Manzhang Xu, Jinpeng Luo, Lei Wu, Mengqi Tang, Bijun Li, Lei Lu, Qianbo Li, Weiwei Ying, Haoting Zheng, Lu Wu, Hao Li, Qiang Jiang, Hanjun Di, Jun Zhao, Wu Zhang, Zhiyong He, Yongmin Zheng, Xiaorui Gan, Xuetao Liu, Zheng Wang, Xuewen Huang, Wei |
| author_sort | Xu, Manzhang |
| collection | NTU |
| description | High-mobility van der Waals ambipolar semiconductors are promising in logic and reconfigurable circuits, integrated optoelectronic circuits, due to the excellent gate-controlled capability and effectively tunability of major charge carriers by electrostatic field. Controllable growth of high-quality ambipolar semiconductors with high mobility and stability is highly glamorous and indispensable for further research. Here, we demonstrate a straightforward space-confined chemical vapor deposition (CVD) method to synthesize high-quality quasi-one-dimensional (1D) tellurium (Te) nanoribbons (NRs). By introducing H2 into the gas flow, endothermic compound H2Te was generated from the reaction of liquid Te with H2, and consequently decomposed into elemental Te at low temperature. Further, the Te NRs have been utilized for in-situ fabrication of field-effect transistors (FETs) without transferring process. Ambipolar features are achieved using nickel (Ni) as an ohmic contact. More importantly, the mobilities of the Te NR transistor for hole/electron are as high as 1755/28.6 cm2V−1s−1 and 4024/278 cm2V−1s−1 at room temperature and under a temperature below 20 K, respectively. Our findings confirm the novel strategy for synthesizing 1D elemental semiconductors and their applications with ambipolar behaviors. |
| first_indexed | 2024-10-01T04:40:57Z |
| format | Journal Article |
| id | ntu-10356/165853 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:40:57Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1658532023-04-14T15:40:57Z Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility Xu, Manzhang Xu, Jinpeng Luo, Lei Wu, Mengqi Tang, Bijun Li, Lei Lu, Qianbo Li, Weiwei Ying, Haoting Zheng, Lu Wu, Hao Li, Qiang Jiang, Hanjun Di, Jun Zhao, Wu Zhang, Zhiyong He, Yongmin Zheng, Xiaorui Gan, Xuetao Liu, Zheng Wang, Xuewen Huang, Wei School of Materials Science and Engineering School of Electrical and Electronic Engineering CINTRA CNRS/NTU/THALES, UMI 3288 Engineering::Materials 2D Materials Chemical Vapor Deposition High-mobility van der Waals ambipolar semiconductors are promising in logic and reconfigurable circuits, integrated optoelectronic circuits, due to the excellent gate-controlled capability and effectively tunability of major charge carriers by electrostatic field. Controllable growth of high-quality ambipolar semiconductors with high mobility and stability is highly glamorous and indispensable for further research. Here, we demonstrate a straightforward space-confined chemical vapor deposition (CVD) method to synthesize high-quality quasi-one-dimensional (1D) tellurium (Te) nanoribbons (NRs). By introducing H2 into the gas flow, endothermic compound H2Te was generated from the reaction of liquid Te with H2, and consequently decomposed into elemental Te at low temperature. Further, the Te NRs have been utilized for in-situ fabrication of field-effect transistors (FETs) without transferring process. Ambipolar features are achieved using nickel (Ni) as an ohmic contact. More importantly, the mobilities of the Te NR transistor for hole/electron are as high as 1755/28.6 cm2V−1s−1 and 4024/278 cm2V−1s−1 at room temperature and under a temperature below 20 K, respectively. Our findings confirm the novel strategy for synthesizing 1D elemental semiconductors and their applications with ambipolar behaviors. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) Submitted/Accepted version The authors gratefully acknowledge financial support by National Key Research and Development Program of China (2020YFB2008501), the National Natural Science Foundation of China (61974120 and 11904289), Key Research and Development Program of Shaanxi Province (2020ZDLGY04-08, 2020GXLH-Z-027, and 2021JZ-43), the Natural Science Foundation of Shaanxi Province (2023-JC-YB-495 and 2022JQ-659), the Key Program for International Science and Technology Cooperation Projects of Shaanxi Province (2018KWZ-08), the Natural Science Foundation of Ningbo (202003N4003), the Fundamental Research Funds for the Central Universities (3102019PY004, 31020190QD010, and 3102019JC004), the start-up funds from Northwestern Polytechnical University, and open research fund of the State Key Laboratory of Organic Electronics and Information Displays. This work was also supported by National Research Foundation–Competitive Research Program NRF-CRP22-2019-0007 and NRF-CRP21-2018-0007, and supported by A*STAR under its AME IRG Grant (Project No. A2083c0052). 2023-04-12T04:43:40Z 2023-04-12T04:43:40Z 2023 Journal Article Xu, M., Xu, J., Luo, L., Wu, M., Tang, B., Li, L., Lu, Q., Li, W., Ying, H., Zheng, L., Wu, H., Li, Q., Jiang, H., Di, J., Zhao, W., Zhang, Z., He, Y., Zheng, X., Gan, X., ...Huang, W. (2023). Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility. Materials Today. https://dx.doi.org/10.1016/j.mattod.2023.02.003 1369-7021 https://hdl.handle.net/10356/165853 10.1016/j.mattod.2023.02.003 2-s2.0-85149890900 en NRF-CRP22- 2019-0007 NRF-CRP-21-2018-0007 A2083c0052 Materials Today © 2023 Elsevier Ltd. All rights reserved. This paper was published in Materials Today and is made available with permission of Elsevier Ltd. application/pdf application/pdf |
| spellingShingle | Engineering::Materials 2D Materials Chemical Vapor Deposition Xu, Manzhang Xu, Jinpeng Luo, Lei Wu, Mengqi Tang, Bijun Li, Lei Lu, Qianbo Li, Weiwei Ying, Haoting Zheng, Lu Wu, Hao Li, Qiang Jiang, Hanjun Di, Jun Zhao, Wu Zhang, Zhiyong He, Yongmin Zheng, Xiaorui Gan, Xuetao Liu, Zheng Wang, Xuewen Huang, Wei Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility |
| title | Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility |
| title_full | Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility |
| title_fullStr | Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility |
| title_full_unstemmed | Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility |
| title_short | Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility |
| title_sort | hydrogen assisted growth of one dimensional tellurium nanoribbons with unprecedented high mobility |
| topic | Engineering::Materials 2D Materials Chemical Vapor Deposition |
| url | https://hdl.handle.net/10356/165853 |
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