| Summary: | Ferroelectric memory is one of the promising candidates to replace FLASH as a
new generation of non-volatile memories (NVM), with the advantages of low power
consumption, thigh writing and erasing speed and large endurance. With the
discovery of ferroelectricity in scandium doped aluminum nitride >100 μC/cm2
, it is
expected to be of many advantages over ferroelectric memories. In this thesis, we
report the tendency of ferroelectric properties in AlScN varying with residual stress
and thickness. Ferroelectricity in a 10nm Al0.7Sc0.3N thin film is observed and
reported in this thesis as well. Capacitors with a Mo/Al0.7Sc0.3N/Al structure where
thickness of Al0.7Sc0.3N is 50nm exhibit high endurance up to 10
6 switching cycles, indicating broad application prospects in ferroelectric storage.
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