Characterization on ferroelectric scandium-doped aluminum nitride for memory applications
Ferroelectric memory is one of the promising candidates to replace FLASH as a new generation of non-volatile memories (NVM), with the advantages of low power consumption, thigh writing and erasing speed and large endurance. With the discovery of ferroelectricity in scandium doped aluminum nitride...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/166378 |
| _version_ | 1811687125563736064 |
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| author | Wang, Zichu |
| author2 | Zhang Qing |
| author_facet | Zhang Qing Wang, Zichu |
| author_sort | Wang, Zichu |
| collection | NTU |
| description | Ferroelectric memory is one of the promising candidates to replace FLASH as a
new generation of non-volatile memories (NVM), with the advantages of low power
consumption, thigh writing and erasing speed and large endurance. With the
discovery of ferroelectricity in scandium doped aluminum nitride >100 μC/cm2
, it is
expected to be of many advantages over ferroelectric memories. In this thesis, we
report the tendency of ferroelectric properties in AlScN varying with residual stress
and thickness. Ferroelectricity in a 10nm Al0.7Sc0.3N thin film is observed and
reported in this thesis as well. Capacitors with a Mo/Al0.7Sc0.3N/Al structure where
thickness of Al0.7Sc0.3N is 50nm exhibit high endurance up to 10
6 switching cycles, indicating broad application prospects in ferroelectric storage. |
| first_indexed | 2024-10-01T05:11:20Z |
| format | Thesis-Master by Coursework |
| id | ntu-10356/166378 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:11:20Z |
| publishDate | 2023 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1663782023-07-04T15:34:55Z Characterization on ferroelectric scandium-doped aluminum nitride for memory applications Wang, Zichu Zhang Qing School of Electrical and Electronic Engineering Agency for Science, Technology and Research (A*STAR) Technical University of Munich eqzhang@ntu.edu.sg Engineering::Electrical and electronic engineering Ferroelectric memory is one of the promising candidates to replace FLASH as a new generation of non-volatile memories (NVM), with the advantages of low power consumption, thigh writing and erasing speed and large endurance. With the discovery of ferroelectricity in scandium doped aluminum nitride >100 μC/cm2 , it is expected to be of many advantages over ferroelectric memories. In this thesis, we report the tendency of ferroelectric properties in AlScN varying with residual stress and thickness. Ferroelectricity in a 10nm Al0.7Sc0.3N thin film is observed and reported in this thesis as well. Capacitors with a Mo/Al0.7Sc0.3N/Al structure where thickness of Al0.7Sc0.3N is 50nm exhibit high endurance up to 10 6 switching cycles, indicating broad application prospects in ferroelectric storage. Master of Science (Green Electronics) 2023-04-24T09:02:22Z 2023-04-24T09:02:22Z 2023 Thesis-Master by Coursework Wang, Z. (2023). Characterization on ferroelectric scandium-doped aluminum nitride for memory applications. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/166378 https://hdl.handle.net/10356/166378 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Wang, Zichu Characterization on ferroelectric scandium-doped aluminum nitride for memory applications |
| title | Characterization on ferroelectric scandium-doped aluminum nitride for memory applications |
| title_full | Characterization on ferroelectric scandium-doped aluminum nitride for memory applications |
| title_fullStr | Characterization on ferroelectric scandium-doped aluminum nitride for memory applications |
| title_full_unstemmed | Characterization on ferroelectric scandium-doped aluminum nitride for memory applications |
| title_short | Characterization on ferroelectric scandium-doped aluminum nitride for memory applications |
| title_sort | characterization on ferroelectric scandium doped aluminum nitride for memory applications |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/166378 |
| work_keys_str_mv | AT wangzichu characterizationonferroelectricscandiumdopedaluminumnitrideformemoryapplications |