Solitary confinement in atomically thin semiconductors
Electrons are often confined using electrostatically defined gates to form quantum dots (QDs). However, naturally occurring TMDCs may possess intrinsic defects that could lead to the formation of inhomogeneous disordered potential throughout the material. This may lead to less efficient electrost...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/166391 |
| _version_ | 1811694982155730944 |
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| author | Leong, Boon Huat |
| author2 | Bent Weber |
| author_facet | Bent Weber Leong, Boon Huat |
| author_sort | Leong, Boon Huat |
| collection | NTU |
| description | Electrons are often confined using electrostatically defined gates to form quantum dots
(QDs). However, naturally occurring TMDCs may possess intrinsic defects that could lead
to the formation of inhomogeneous disordered potential throughout the material. This may
lead to less efficient electrostatic control of QDs which its success is crucial in contributing
to the success of quantum computing.
In this report, we demonstrate electron confinement due to disordered potential by fabricating
a MoS2 transistor with a split-gate structure through mechanical exfoliation, electron-beam
lithography and stacking methods. Thereafter, we measured the transfer characteristics
of the device and demonstrate QD formation through a 2D plot depicting Coulomb
diamonds. We also utilise COMSOL simulation to show no QD formation due to electrostatically
defined gates on our device which implies that electron confinement caused by
disordered potential. This was shown by taking a closer look at the gate spectroscopy data
that was consistent with other similar published devices that displayed confinement due to
disordered potential. |
| first_indexed | 2024-10-01T07:16:13Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/166391 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:16:13Z |
| publishDate | 2023 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1663912023-05-01T15:36:16Z Solitary confinement in atomically thin semiconductors Leong, Boon Huat Bent Weber School of Physical and Mathematical Sciences b.weber@ntu.edu.sg Science::Physics Electrons are often confined using electrostatically defined gates to form quantum dots (QDs). However, naturally occurring TMDCs may possess intrinsic defects that could lead to the formation of inhomogeneous disordered potential throughout the material. This may lead to less efficient electrostatic control of QDs which its success is crucial in contributing to the success of quantum computing. In this report, we demonstrate electron confinement due to disordered potential by fabricating a MoS2 transistor with a split-gate structure through mechanical exfoliation, electron-beam lithography and stacking methods. Thereafter, we measured the transfer characteristics of the device and demonstrate QD formation through a 2D plot depicting Coulomb diamonds. We also utilise COMSOL simulation to show no QD formation due to electrostatically defined gates on our device which implies that electron confinement caused by disordered potential. This was shown by taking a closer look at the gate spectroscopy data that was consistent with other similar published devices that displayed confinement due to disordered potential. Bachelor of Science in Applied Physics 2023-04-28T05:52:55Z 2023-04-28T05:52:55Z 2023 Final Year Project (FYP) Leong, B. H. (2023). Solitary confinement in atomically thin semiconductors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/166391 https://hdl.handle.net/10356/166391 en application/pdf Nanyang Technological University |
| spellingShingle | Science::Physics Leong, Boon Huat Solitary confinement in atomically thin semiconductors |
| title | Solitary confinement in atomically thin semiconductors |
| title_full | Solitary confinement in atomically thin semiconductors |
| title_fullStr | Solitary confinement in atomically thin semiconductors |
| title_full_unstemmed | Solitary confinement in atomically thin semiconductors |
| title_short | Solitary confinement in atomically thin semiconductors |
| title_sort | solitary confinement in atomically thin semiconductors |
| topic | Science::Physics |
| url | https://hdl.handle.net/10356/166391 |
| work_keys_str_mv | AT leongboonhuat solitaryconfinementinatomicallythinsemiconductors |