Mitigation of corner polysilicon residues through nitride liner etch relocation
NAND flash memory has grown enormously and becomes the most popular non-volatile SSD (Solid State Drives). After 2D NAND reaches its limit, the 3D structure has become the mainstream of NAND. 3D NAND increases capacity in a given footprint without an excessive shrinking of the flash memory chips to...
Main Author: | Zheng, Zhe |
---|---|
Other Authors: | Wang Hong |
Format: | Thesis-Master by Coursework |
Language: | English |
Published: |
Nanyang Technological University
2023
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/166578 |
Similar Items
-
Pattern dependencies in the plasma etching of polysilicon
by: Dalton, Timothy Joseph
Published: (2005) -
Screening experiment for a polysilicon gate etch chamber
by: Levis, Kim-Marie, 1976-
Published: (2014) -
Modeling of the plasma etching of polysilicon with chloro- and bromo-trifluoromethane discharges
by: Allen, Kenneth Donald
Published: (2005) -
Feature profile evolution during the high density plasma etching of polysilicon
by: Mahorowala, Arpan P. (Arpan Pravin), 1970-
Published: (2010) -
Etching kinetics and surface roughening of polysilicon and dielectric materials in inductively coupled plasma beams
by: Yin, Yunpeng, Ph. D. Massachusetts Institute of Technology
Published: (2009)