Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers
Antimony chalcogenides are a prime candidate for harvesting solar power due to their tuneable bandgaps, high absorption coefficient of 105 cm-1, and abundance of constituent elements. While antimony chalcogenides are promising as photoabsorbers, their anisotropic electrical conductivity requires pre...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/166648 |
| _version_ | 1811689152655130624 |
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| author | Panda, Deepan |
| author2 | Lydia Helena Wong |
| author_facet | Lydia Helena Wong Panda, Deepan |
| author_sort | Panda, Deepan |
| collection | NTU |
| description | Antimony chalcogenides are a prime candidate for harvesting solar power due to their tuneable bandgaps, high absorption coefficient of 105 cm-1, and abundance of constituent elements. While antimony chalcogenides are promising as photoabsorbers, their anisotropic electrical conductivity requires preferred orientation to have efficient charge transport. While n-type materials were previously studied to induce this preferred orientation, this project investigates the use of covellite (CuS), a p-type material as a nucleating layer. Two fabrication methods for covellite were investigated. While chemical bath deposition yielded poorly crystalline covellite that was not able to induce [hk1]-orientation in antimony chalcogenide, spray pyrolysis produced more crystalline covellite with a dendritic microstructure, which provided [hk1]-oriented photoabsorber when 30% Se was added to the hydrothermal reaction mixture during a 4 h reaction. When device fabrication was completed by deposition of cadmium sulphide electron transport layer and platinum catalyst layer, the resulting device showed an appreciable photocurrent of 0.95 mAcm-2, with an onset potential of 0.61 V relative to reversible hydrogen electrode. |
| first_indexed | 2024-10-01T05:43:34Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/166648 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:43:34Z |
| publishDate | 2023 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1666482023-05-13T16:46:22Z Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers Panda, Deepan Lydia Helena Wong School of Materials Science and Engineering LydiaWong@ntu.edu.sg Engineering::Materials::Microelectronics and semiconductor materials::Thin films Antimony chalcogenides are a prime candidate for harvesting solar power due to their tuneable bandgaps, high absorption coefficient of 105 cm-1, and abundance of constituent elements. While antimony chalcogenides are promising as photoabsorbers, their anisotropic electrical conductivity requires preferred orientation to have efficient charge transport. While n-type materials were previously studied to induce this preferred orientation, this project investigates the use of covellite (CuS), a p-type material as a nucleating layer. Two fabrication methods for covellite were investigated. While chemical bath deposition yielded poorly crystalline covellite that was not able to induce [hk1]-orientation in antimony chalcogenide, spray pyrolysis produced more crystalline covellite with a dendritic microstructure, which provided [hk1]-oriented photoabsorber when 30% Se was added to the hydrothermal reaction mixture during a 4 h reaction. When device fabrication was completed by deposition of cadmium sulphide electron transport layer and platinum catalyst layer, the resulting device showed an appreciable photocurrent of 0.95 mAcm-2, with an onset potential of 0.61 V relative to reversible hydrogen electrode. Bachelor of Engineering (Materials Engineering) 2023-05-09T01:18:35Z 2023-05-09T01:18:35Z 2023 Final Year Project (FYP) Panda, D. (2023). Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/166648 https://hdl.handle.net/10356/166648 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Materials::Microelectronics and semiconductor materials::Thin films Panda, Deepan Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers |
| title | Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers |
| title_full | Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers |
| title_fullStr | Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers |
| title_full_unstemmed | Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers |
| title_short | Using covellite to control [hk1] orientation of antimony chalcogenide photoabsorbers |
| title_sort | using covellite to control hk1 orientation of antimony chalcogenide photoabsorbers |
| topic | Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/166648 |
| work_keys_str_mv | AT pandadeepan usingcovellitetocontrolhk1orientationofantimonychalcogenidephotoabsorbers |