Design of precision-aware subthreshold-based MOSFET voltage reference
A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/167028 |