| Summary: | RF amplifier as the name implies, is an amplifier operate at specific radio frequency range depending on the RF application. The structure of RF amplifier is mainly made up of an active component such as transistor operating at high frequency range with reactive components and passive components. The application of RF amplifier can be found widely in wireless communication , broadcasting and military usage. RF amplifier can be classified into power amplifier and low noise amplifier. The purpose of this project is to design a BJT bipolar junction transistor low noise amplifier at ultra high band frequency of 1.8GHz with gain that exceeds 21dB , noise figure, input return loss and output return loss that not more than 1dB, -10dB and -10dB respectively. Factors that affect the parameters mentioned above will be analyzed and discussed.
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