Flexible gallium nitride devices for various applications in internet of things
Several studies describing the formation and characterization of GaN films for flexible optoelectronic devices have been published. However, the fabrication method and process are not yet illustrated. We describe the steps required to fabricate an MSM PD from a bare substrate, as well as the v...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167211 |