Thin gate oxide based carbon nanotube field effect transistors

This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. Literature reviews have been given to start out the understanding of new CNTs technology, in aiding the progress of this project. As the projec...

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Bibliographic Details
Main Author: Soh, Candy Shia Leng.
Other Authors: Zhang Qing
Format: Final Year Project (FYP)
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/16739
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author Soh, Candy Shia Leng.
author2 Zhang Qing
author_facet Zhang Qing
Soh, Candy Shia Leng.
author_sort Soh, Candy Shia Leng.
collection NTU
description This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. Literature reviews have been given to start out the understanding of new CNTs technology, in aiding the progress of this project. As the project proceeded along the way, more papers are being read through in order to find if any newest or latest technology can be found in the aid of the project. Before fabricating the devices for the experiments, processes and equipment are being taught and learnt to get the knowledge in order to use them usefully and handy. The fabrication of the device is the most important in this report. The equipment and the processes used to fabrication the device will be discussed in detailed. The carbon nanotube FETs may have better controllability on carbon nanotube channel due to small thickness of gate oxide and the threshold voltage of the CNTFETs may be varied with the work function of gate electrodes. Measurements and graphs are shown in the results and discussions.
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spelling ntu-10356/167392023-07-07T16:00:06Z Thin gate oxide based carbon nanotube field effect transistors Soh, Candy Shia Leng. Zhang Qing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. Literature reviews have been given to start out the understanding of new CNTs technology, in aiding the progress of this project. As the project proceeded along the way, more papers are being read through in order to find if any newest or latest technology can be found in the aid of the project. Before fabricating the devices for the experiments, processes and equipment are being taught and learnt to get the knowledge in order to use them usefully and handy. The fabrication of the device is the most important in this report. The equipment and the processes used to fabrication the device will be discussed in detailed. The carbon nanotube FETs may have better controllability on carbon nanotube channel due to small thickness of gate oxide and the threshold voltage of the CNTFETs may be varied with the work function of gate electrodes. Measurements and graphs are shown in the results and discussions. Bachelor of Engineering 2009-05-28T03:07:09Z 2009-05-28T03:07:09Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/16739 en Nanyang Technological University 83 p. application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Soh, Candy Shia Leng.
Thin gate oxide based carbon nanotube field effect transistors
title Thin gate oxide based carbon nanotube field effect transistors
title_full Thin gate oxide based carbon nanotube field effect transistors
title_fullStr Thin gate oxide based carbon nanotube field effect transistors
title_full_unstemmed Thin gate oxide based carbon nanotube field effect transistors
title_short Thin gate oxide based carbon nanotube field effect transistors
title_sort thin gate oxide based carbon nanotube field effect transistors
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
url http://hdl.handle.net/10356/16739
work_keys_str_mv AT sohcandyshialeng thingateoxidebasedcarbonnanotubefieldeffecttransistors