Nanosphere lithography for ordered-arrayed semiconductor nanowire formation via top-down method
Vertically aligned group IV semiconductor nanowires are great interest of research recently because of their promising applications in future large–density electronics and photonics and their compatibility with current Si dominated technology. In this project, nanosphere lithography will be explo...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/16757 |