Next-generation power converter design using wide bandgap power devices
Silicon-based semiconductor power switching devices have reached their performance limits. In order to meet the energy concept of sustainable development and low-carbon society, we need to further improve the power switching characteristics by researching breakthrough technologies. This study focuse...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/168069 |
| _version_ | 1824456824231821312 |
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| author | Shang, Shuye |
| author2 | Tang Yi |
| author_facet | Tang Yi Shang, Shuye |
| author_sort | Shang, Shuye |
| collection | NTU |
| description | Silicon-based semiconductor power switching devices have reached their performance limits. In order to meet the energy concept of sustainable development and low-carbon society, we need to further improve the power switching characteristics by researching breakthrough technologies. This study focuses on the wide bandgap (WBG) power devices such as SiC MOSFETs which have the superior electrical characteristics, providing new opportunities for the design of next-generation ultra-high efficiency and ultra-high power density power converters. This project analyzes the power switch tube process and the latest high-frequency switching WBG technology through a multidisciplinary approach to facilitate the design of WBG-based power converters in terms of energy efficiency, power density, and operational reliability.
I analyzed the switching principle of power MOSFETs from the internal level, the superiority of wide bangap devices from the microscopic material level. At the same time, I investigated the switching characteristics of Si and SiC MOSFET devices, and established a specific SiC MOSFET switch mathematical model. Due to the high switching speed of these devices, early design optimization in practical engineering applications requires modeling and optimizing the design. This study compares the difference in switching time and switching loss between Si MOSFET and SiC MOSFET in similar situations by LTSpice simulation. This study also provides a mathematical model that can simulate device switching characteristics and analyze the influence of parasitic parameters on the switching process for practical engineering applications. The project aims to promote the future development of wide-bandgap semiconductor power devices, expand their use to new applications, and reduce their cost, making them more and more competitive with traditional silicon-based devices. |
| first_indexed | 2025-02-19T04:00:14Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/168069 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T04:00:14Z |
| publishDate | 2023 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1680692023-07-07T15:53:30Z Next-generation power converter design using wide bandgap power devices Shang, Shuye Tang Yi School of Electrical and Electronic Engineering yitang@ntu.edu.sg Engineering::Electrical and electronic engineering::Power electronics Silicon-based semiconductor power switching devices have reached their performance limits. In order to meet the energy concept of sustainable development and low-carbon society, we need to further improve the power switching characteristics by researching breakthrough technologies. This study focuses on the wide bandgap (WBG) power devices such as SiC MOSFETs which have the superior electrical characteristics, providing new opportunities for the design of next-generation ultra-high efficiency and ultra-high power density power converters. This project analyzes the power switch tube process and the latest high-frequency switching WBG technology through a multidisciplinary approach to facilitate the design of WBG-based power converters in terms of energy efficiency, power density, and operational reliability. I analyzed the switching principle of power MOSFETs from the internal level, the superiority of wide bangap devices from the microscopic material level. At the same time, I investigated the switching characteristics of Si and SiC MOSFET devices, and established a specific SiC MOSFET switch mathematical model. Due to the high switching speed of these devices, early design optimization in practical engineering applications requires modeling and optimizing the design. This study compares the difference in switching time and switching loss between Si MOSFET and SiC MOSFET in similar situations by LTSpice simulation. This study also provides a mathematical model that can simulate device switching characteristics and analyze the influence of parasitic parameters on the switching process for practical engineering applications. The project aims to promote the future development of wide-bandgap semiconductor power devices, expand their use to new applications, and reduce their cost, making them more and more competitive with traditional silicon-based devices. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-06-06T11:24:27Z 2023-06-06T11:24:27Z 2023 Final Year Project (FYP) Shang, S. (2023). Next-generation power converter design using wide bandgap power devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/168069 https://hdl.handle.net/10356/168069 en W1203-222 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering::Power electronics Shang, Shuye Next-generation power converter design using wide bandgap power devices |
| title | Next-generation power converter design using wide bandgap power devices |
| title_full | Next-generation power converter design using wide bandgap power devices |
| title_fullStr | Next-generation power converter design using wide bandgap power devices |
| title_full_unstemmed | Next-generation power converter design using wide bandgap power devices |
| title_short | Next-generation power converter design using wide bandgap power devices |
| title_sort | next generation power converter design using wide bandgap power devices |
| topic | Engineering::Electrical and electronic engineering::Power electronics |
| url | https://hdl.handle.net/10356/168069 |
| work_keys_str_mv | AT shangshuye nextgenerationpowerconverterdesignusingwidebandgappowerdevices |