Atomic transistors beyond Moore's law
This dissertation presents the characterization and fabrication of black phosphorous (BP) field-effect transistors (FETs). Schottky barrier and carrier transport regime at the metal/semiconductor interface is modified by forming a van der Waals heterostructure, which causes the reduction of the cont...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/168077 |