Fabrication and characterization of spin-based synaptic devices
Spin orbit torque (SOT) induced chiral domain wall (DW) motion in heavy-metal/ferromagnetic racetrack devices is promising for achieving energy-efficient and high-speed computing elements for edge intelligence[1]. By utilizing fine-grained control of the DW positions and hence, variable resistance r...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/168537 |
| _version_ | 1824454008381636608 |
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| author | Lim, Idayu |
| author2 | Radhakrishnan K |
| author_facet | Radhakrishnan K Lim, Idayu |
| author_sort | Lim, Idayu |
| collection | NTU |
| description | Spin orbit torque (SOT) induced chiral domain wall (DW) motion in heavy-metal/ferromagnetic racetrack devices is promising for achieving energy-efficient and high-speed computing elements for edge intelligence[1]. By utilizing fine-grained control of the DW positions and hence, variable resistance readouts, analog synapses can be emulated[2]. This work studies the chiral DW nucleation and dynamics within Pt/Co/MgO wire racetracks, in a parallel multi-wire configuration, to achieve a multi-state variable resistor mimicking synaptic operations. The [𝑃𝑡3/𝐶𝑜0.9 / 𝑀𝑔𝑂1.5] 𝑥15 thin film, with Dzyaloshinskii-Moriya interaction of 1.6 mJ/ 𝑚2 and effective perpendicular anisotropy of 0.264 MJ/𝑚3, was fabricated into a multiple racetrack device of varying wire widths (900 nm - 1200 nm). An optimal wire nucleation pad to wire width ratio of 10:1 is selected to ensure preferential nucleation of domains within the nucleation pads. Using the magneto optic Kerr effect microscopy with in situ electrical pulsing set-up, we demonstrate DW motion across the wires in the velocity range of 0.3 – 1.3 m/s, when subjected to injected voltages of 3.5 to 5 V and pulse widths of 0.25 us to 1 us. These results pave the path for engineering chiral spin textures for unconventional computing frameworks. |
| first_indexed | 2025-02-19T03:15:29Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/168537 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:15:29Z |
| publishDate | 2023 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1685372023-07-07T16:04:02Z Fabrication and characterization of spin-based synaptic devices Lim, Idayu Radhakrishnan K School of Electrical and Electronic Engineering A*STAR Institute of Material Research and Engineering ERADHA@ntu.edu.sg Engineering::Electrical and electronic engineering Spin orbit torque (SOT) induced chiral domain wall (DW) motion in heavy-metal/ferromagnetic racetrack devices is promising for achieving energy-efficient and high-speed computing elements for edge intelligence[1]. By utilizing fine-grained control of the DW positions and hence, variable resistance readouts, analog synapses can be emulated[2]. This work studies the chiral DW nucleation and dynamics within Pt/Co/MgO wire racetracks, in a parallel multi-wire configuration, to achieve a multi-state variable resistor mimicking synaptic operations. The [𝑃𝑡3/𝐶𝑜0.9 / 𝑀𝑔𝑂1.5] 𝑥15 thin film, with Dzyaloshinskii-Moriya interaction of 1.6 mJ/ 𝑚2 and effective perpendicular anisotropy of 0.264 MJ/𝑚3, was fabricated into a multiple racetrack device of varying wire widths (900 nm - 1200 nm). An optimal wire nucleation pad to wire width ratio of 10:1 is selected to ensure preferential nucleation of domains within the nucleation pads. Using the magneto optic Kerr effect microscopy with in situ electrical pulsing set-up, we demonstrate DW motion across the wires in the velocity range of 0.3 – 1.3 m/s, when subjected to injected voltages of 3.5 to 5 V and pulse widths of 0.25 us to 1 us. These results pave the path for engineering chiral spin textures for unconventional computing frameworks. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-06-14T08:08:12Z 2023-06-14T08:08:12Z 2023 Final Year Project (FYP) Lim, I. (2023). Fabrication and characterization of spin-based synaptic devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/168537 https://hdl.handle.net/10356/168537 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Lim, Idayu Fabrication and characterization of spin-based synaptic devices |
| title | Fabrication and characterization of spin-based synaptic devices |
| title_full | Fabrication and characterization of spin-based synaptic devices |
| title_fullStr | Fabrication and characterization of spin-based synaptic devices |
| title_full_unstemmed | Fabrication and characterization of spin-based synaptic devices |
| title_short | Fabrication and characterization of spin-based synaptic devices |
| title_sort | fabrication and characterization of spin based synaptic devices |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/168537 |
| work_keys_str_mv | AT limidayu fabricationandcharacterizationofspinbasedsynapticdevices |