Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as w...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Online Access: | https://hdl.handle.net/10356/169320 |
| _version_ | 1826124785716822016 |
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| author | Tai, Yeh-Chen An, Shu Huang, Po-Rei Jheng, Yue-Tong Lee, Kuo-Chih Cheng, Hung-Hsiang Kim, Munho Chang, Guo-En |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tai, Yeh-Chen An, Shu Huang, Po-Rei Jheng, Yue-Tong Lee, Kuo-Chih Cheng, Hung-Hsiang Kim, Munho Chang, Guo-En |
| author_sort | Tai, Yeh-Chen |
| collection | NTU |
| description | Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as well as optoelectronic properties. Herein, for the first time, we present the use of transfer-printing techniques to enable a cost-effective, nontoxic GeSn MIR resonant-cavity-enhanced FPDs (RCE-FPDs) with strain-amplified optical responses. A narrow bandgap nontoxic GeSn nanomembrane was employed as the active layer, which was grown on a silicon-on-insulator substrate and then transfer-printed onto a polyethylene terephthalate (PET) substrate, eliminating the unwanted defects and residual compressive strain, to yield the MIR RCE-FPDs. In addition, a vertical cavity was created for the GeSn active layer to enhance the optical responsivity. Under bending conditions, significant tensile strain up to 0.274% was introduced into the GeSn active layer to effectively modulate the band structure, extend the photodetection in the MIR region, and substantially enhance the optical responsivity to 0.292 A W-1 at λ = 1770 nm, corresponding to an enhancement of 323% compared with the device under flat conditions. Moreover, theoretical simulations were performed to confirm the strain effect on the device performance. The results demonstrated high-performance, nontoxic MIR RCE-FPDs for applications in flexible photodetection. |
| first_indexed | 2024-10-01T06:26:22Z |
| format | Journal Article |
| id | ntu-10356/169320 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:26:22Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1693202023-07-14T15:39:51Z Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses Tai, Yeh-Chen An, Shu Huang, Po-Rei Jheng, Yue-Tong Lee, Kuo-Chih Cheng, Hung-Hsiang Kim, Munho Chang, Guo-En School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Flexible Photodetectors Midinfrared Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as well as optoelectronic properties. Herein, for the first time, we present the use of transfer-printing techniques to enable a cost-effective, nontoxic GeSn MIR resonant-cavity-enhanced FPDs (RCE-FPDs) with strain-amplified optical responses. A narrow bandgap nontoxic GeSn nanomembrane was employed as the active layer, which was grown on a silicon-on-insulator substrate and then transfer-printed onto a polyethylene terephthalate (PET) substrate, eliminating the unwanted defects and residual compressive strain, to yield the MIR RCE-FPDs. In addition, a vertical cavity was created for the GeSn active layer to enhance the optical responsivity. Under bending conditions, significant tensile strain up to 0.274% was introduced into the GeSn active layer to effectively modulate the band structure, extend the photodetection in the MIR region, and substantially enhance the optical responsivity to 0.292 A W-1 at λ = 1770 nm, corresponding to an enhancement of 323% compared with the device under flat conditions. Moreover, theoretical simulations were performed to confirm the strain effect on the device performance. The results demonstrated high-performance, nontoxic MIR RCE-FPDs for applications in flexible photodetection. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) Published version This work at CCU was supported by the Young Scholar Fellowship Program by the Ministry of Science and Technology of Taiwan (MOST) under Grant no. MOST 111-2636-E-194-002 and MOST 110-2636-E-194-002. The work at Nanyang Technological University was supported by the A*STAR, Singapore, Advanced Manufacturing and Engineering (AME) Young Individual Research Grant (YIRG) under the Project A2084c0066, and Ministry of Education, Singapore, under the Grant ACRF Tier 2 grant (T2EP50120-0001) and Tier 1-2020-T1- 002-020 (RG136/20). The authors also acknowledge the support of the Nanyang NanoFabrication Centre (N2FC). 2023-07-12T06:47:26Z 2023-07-12T06:47:26Z 2023 Journal Article Tai, Y., An, S., Huang, P., Jheng, Y., Lee, K., Cheng, H., Kim, M. & Chang, G. (2023). Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses. Nanoscale, 15(17), 7745-7754. https://dx.doi.org/10.1039/d2nr07107j 2040-3364 https://hdl.handle.net/10356/169320 10.1039/d2nr07107j 37000582 2-s2.0-85152103773 17 15 7745 7754 en A2084c0066 T2EP50120-0001 2020-T1-002-020 (RG136/20) Nanoscale © 2023 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Flexible Photodetectors Midinfrared Tai, Yeh-Chen An, Shu Huang, Po-Rei Jheng, Yue-Tong Lee, Kuo-Chih Cheng, Hung-Hsiang Kim, Munho Chang, Guo-En Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses |
| title | Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses |
| title_full | Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses |
| title_fullStr | Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses |
| title_full_unstemmed | Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses |
| title_short | Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses |
| title_sort | transfer printing enabled gesn flexible resonant cavity enhanced photodetectors with strain amplified mid infrared optical responses |
| topic | Engineering::Electrical and electronic engineering Flexible Photodetectors Midinfrared |
| url | https://hdl.handle.net/10356/169320 |
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