Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂
Among the family of transition metal dichalcogenides, 1T-TaS2 stands out for several peculiar physical properties including a rich charge density wave phase diagram, quantum spin liquid candidacy and low temperature Mott insulator phase. As 1T-TaS2 is thinned down to the few-layer limit, interesting...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/169653 |
| _version_ | 1811676589484670976 |
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| author | Zhang, Songtian S. Rajendran, Anjaly Chae, Sang Hoon Zhang, Shuai Pan, Tsai-Chun Hone, James C. Dean, Cory R. Basov, D. N. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Songtian S. Rajendran, Anjaly Chae, Sang Hoon Zhang, Shuai Pan, Tsai-Chun Hone, James C. Dean, Cory R. Basov, D. N. |
| author_sort | Zhang, Songtian S. |
| collection | NTU |
| description | Among the family of transition metal dichalcogenides, 1T-TaS2 stands out for several peculiar physical properties including a rich charge density wave phase diagram, quantum spin liquid candidacy and low temperature Mott insulator phase. As 1T-TaS2 is thinned down to the few-layer limit, interesting physics emerges in this quasi 2D material. Here, using scanning near-field optical microscopy, we perform a spatial- and temperature-dependent study on the phase transitions of a few-layer thick microcrystal of 1T-TaS2. We investigate encapsulated air-sensitive 1T-TaS2 prepared under inert conditions down to cryogenic temperatures. We find an abrupt metal-to-insulator transition in this few-layer limit. Our results provide new insight in contrast to previous transport studies on thin 1T-TaS2 where the resistivity jump became undetectable, and to spatially resolved studies on non-encapsulated samples which found a gradual, spatially inhomogeneous transition. A statistical analysis suggests bimodal high and low temperature phases, and that the characteristic phase transition hysteresis is preserved down to a few-layer limit. |
| first_indexed | 2024-10-01T02:23:53Z |
| format | Journal Article |
| id | ntu-10356/169653 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:23:53Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1696532023-07-28T15:39:40Z Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ Zhang, Songtian S. Rajendran, Anjaly Chae, Sang Hoon Zhang, Shuai Pan, Tsai-Chun Hone, James C. Dean, Cory R. Basov, D. N. School of Electrical and Electronic Engineering School of Materials Science and Engineering Engineering::Electrical and electronic engineering Phase Transition Transition Metal Dichalcogenides Among the family of transition metal dichalcogenides, 1T-TaS2 stands out for several peculiar physical properties including a rich charge density wave phase diagram, quantum spin liquid candidacy and low temperature Mott insulator phase. As 1T-TaS2 is thinned down to the few-layer limit, interesting physics emerges in this quasi 2D material. Here, using scanning near-field optical microscopy, we perform a spatial- and temperature-dependent study on the phase transitions of a few-layer thick microcrystal of 1T-TaS2. We investigate encapsulated air-sensitive 1T-TaS2 prepared under inert conditions down to cryogenic temperatures. We find an abrupt metal-to-insulator transition in this few-layer limit. Our results provide new insight in contrast to previous transport studies on thin 1T-TaS2 where the resistivity jump became undetectable, and to spatially resolved studies on non-encapsulated samples which found a gradual, spatially inhomogeneous transition. A statistical analysis suggests bimodal high and low temperature phases, and that the characteristic phase transition hysteresis is preserved down to a few-layer limit. Published version Research at Columbia is solely supported as part of Programmable Quantum Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under award DE-SC0019443. Development of nano-imaging instrumentation is supported by DE-SC0018426. 2023-07-28T02:20:49Z 2023-07-28T02:20:49Z 2023 Journal Article Zhang, S. S., Rajendran, A., Chae, S. H., Zhang, S., Pan, T., Hone, J. C., Dean, C. R. & Basov, D. N. (2023). Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂. Nanophotonics, 12(14), 2841-2847. https://dx.doi.org/10.1515/nanoph-2022-0750 2192-8606 https://hdl.handle.net/10356/169653 10.1515/nanoph-2022-0750 2-s2.0-85151819036 14 12 2841 2847 en Nanophotonics © 2023 the author(s), published by De Gruyter. This work is licensed under the Creative Commons Attribution 4.0 International License. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Phase Transition Transition Metal Dichalcogenides Zhang, Songtian S. Rajendran, Anjaly Chae, Sang Hoon Zhang, Shuai Pan, Tsai-Chun Hone, James C. Dean, Cory R. Basov, D. N. Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ |
| title | Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ |
| title_full | Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ |
| title_fullStr | Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ |
| title_full_unstemmed | Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ |
| title_short | Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS₂ |
| title_sort | nano infrared imaging of metal insulator transition in few layer 1t tas₂ |
| topic | Engineering::Electrical and electronic engineering Phase Transition Transition Metal Dichalcogenides |
| url | https://hdl.handle.net/10356/169653 |
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