Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate

Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate

The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been identified as a promising candidate for realizing Si-based light sources. However, the previous research suffered from a...

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Detalhes bibliográficos
Principais autores:	Wu, Shaoteng, Zhang, Lin, Wan, Rongqiao, Zhou, Hao, Lee, Kwang Hong, Chen, Qimiao, Huang, Yi-Chiau, Gong, Xiao, Tan, Chuan Seng
Outros Autores:	School of Electrical and Electronic Engineering
Formato:	Journal Article
Idioma:	English
Publicado em:	2023
Assuntos:	Engineering::Electrical and electronic engineering::Microelectronics GeSn LED Multi-Quantum Well
Acesso em linha:	https://hdl.handle.net/10356/169668

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