Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-int...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2023
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| Online Access: | https://hdl.handle.net/10356/169701 |
| _version_ | 1811686881407008768 |
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| author | Zahoor, Furqan Hussin, Fawnizu Azmadi Isyaku, Usman Bature Gupta, Shagun Khanday, Farooq Ahmad Chattopadhyay, Anupam Abbas, Haider |
| author2 | School of Computer Science and Engineering |
| author_facet | School of Computer Science and Engineering Zahoor, Furqan Hussin, Fawnizu Azmadi Isyaku, Usman Bature Gupta, Shagun Khanday, Farooq Ahmad Chattopadhyay, Anupam Abbas, Haider |
| author_sort | Zahoor, Furqan |
| collection | NTU |
| description | The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented. |
| first_indexed | 2024-10-01T05:07:28Z |
| format | Journal Article |
| id | ntu-10356/169701 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:07:28Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1697012023-08-04T15:36:10Z Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing Zahoor, Furqan Hussin, Fawnizu Azmadi Isyaku, Usman Bature Gupta, Shagun Khanday, Farooq Ahmad Chattopadhyay, Anupam Abbas, Haider School of Computer Science and Engineering School of Electrical and Electronic Engineering Engineering::Computer science and engineering Engineering::Electrical and electronic engineering Resistive Random Access Memory High-Density Memory The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented. Published version This work was funded by Yayasan Universiti Teknologi PETRONAS (YUTP)-Fundamental Research Grant with cost centre 015LC0-245, and part of this research was carried out with the support of Grant NRF-CRP21-2018-0003. 2023-07-31T08:03:20Z 2023-07-31T08:03:20Z 2023 Journal Article Zahoor, F., Hussin, F. A., Isyaku, U. B., Gupta, S., Khanday, F. A., Chattopadhyay, A. & Abbas, H. (2023). Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing. Discover Nano, 18(1), 36-. https://dx.doi.org/10.1186/s11671-023-03775-y 2731-9229 https://hdl.handle.net/10356/169701 10.1186/s11671-023-03775-y 37382679 2-s2.0-85149912202 1 18 36 en Discover Nano © The Author(s) 2023, corrected publication 2023. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. application/pdf |
| spellingShingle | Engineering::Computer science and engineering Engineering::Electrical and electronic engineering Resistive Random Access Memory High-Density Memory Zahoor, Furqan Hussin, Fawnizu Azmadi Isyaku, Usman Bature Gupta, Shagun Khanday, Farooq Ahmad Chattopadhyay, Anupam Abbas, Haider Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing |
| title | Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing |
| title_full | Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing |
| title_fullStr | Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing |
| title_full_unstemmed | Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing |
| title_short | Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing |
| title_sort | resistive random access memory introduction to device mechanism materials and application to neuromorphic computing |
| topic | Engineering::Computer science and engineering Engineering::Electrical and electronic engineering Resistive Random Access Memory High-Density Memory |
| url | https://hdl.handle.net/10356/169701 |
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