Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries
Band bending near mirror twin domain boundaries (MTBs) in a MoSe2 monolayer grown on different substrates, i.e., highly oriented pyrolytic graphite (HOPG), graphene-on-SiC, and crystalline Au(110), is investigated by low temperature scanning tunneling microscopy/spectroscopy. Upshift bending of the...
Main Authors: | , , , , , , |
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Format: | Journal Article |
Language: | English |
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2023
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Online Access: | https://hdl.handle.net/10356/170048 |
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author | Yuan, Mengfei Zhang, Junqiu Yue, Xingyu Xia, Yipu Jin, Yuanjun Ho, Wingkin Xie, Maohai |
author2 | School of Physical and Mathematical Sciences |
author_facet | School of Physical and Mathematical Sciences Yuan, Mengfei Zhang, Junqiu Yue, Xingyu Xia, Yipu Jin, Yuanjun Ho, Wingkin Xie, Maohai |
author_sort | Yuan, Mengfei |
collection | NTU |
description | Band bending near mirror twin domain boundaries (MTBs) in a MoSe2 monolayer grown on different substrates, i.e., highly oriented pyrolytic graphite (HOPG), graphene-on-SiC, and crystalline Au(110), is investigated by low temperature scanning tunneling microscopy/spectroscopy. Upshift bending of the valence band edge near MTB is observed on both graphene and HOPG substrates, whereas a downshift bending is found on Au(110). For the former, the magnitudes of bending are different. This is explained based on the static charge model, where an accumulative charge exists at MTBs due to both the electrical dipole discontinuity across the MTB as well as charge transfer between the substrate and MoSe2 epilayer. The relevance of the static electric model is further affirmed by noting a geometric effect on the band bending, where it is asymmetric across the vertex of an MTB loop. |
first_indexed | 2024-10-01T07:01:00Z |
format | Journal Article |
id | ntu-10356/170048 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:01:00Z |
publishDate | 2023 |
record_format | dspace |
spelling | ntu-10356/1700482023-08-28T15:35:02Z Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries Yuan, Mengfei Zhang, Junqiu Yue, Xingyu Xia, Yipu Jin, Yuanjun Ho, Wingkin Xie, Maohai School of Physical and Mathematical Sciences Science::Physics Band Bending Scanning Tunneling Spectroscopy Band bending near mirror twin domain boundaries (MTBs) in a MoSe2 monolayer grown on different substrates, i.e., highly oriented pyrolytic graphite (HOPG), graphene-on-SiC, and crystalline Au(110), is investigated by low temperature scanning tunneling microscopy/spectroscopy. Upshift bending of the valence band edge near MTB is observed on both graphene and HOPG substrates, whereas a downshift bending is found on Au(110). For the former, the magnitudes of bending are different. This is explained based on the static charge model, where an accumulative charge exists at MTBs due to both the electrical dipole discontinuity across the MTB as well as charge transfer between the substrate and MoSe2 epilayer. The relevance of the static electric model is further affirmed by noting a geometric effect on the band bending, where it is asymmetric across the vertex of an MTB loop. Published version This work was financially supported by grants from the Research Grant Council of Hong Kong Special Administrative Region, China (Nos. C7036/17W and AoE/P-701/20). 2023-08-22T07:33:55Z 2023-08-22T07:33:55Z 2023 Journal Article Yuan, M., Zhang, J., Yue, X., Xia, Y., Jin, Y., Ho, W. & Xie, M. (2023). Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries. Advanced Electronic Materials, 9(7), 2300112-. https://dx.doi.org/10.1002/aelm.202300112 2199-160X https://hdl.handle.net/10356/170048 10.1002/aelm.202300112 2-s2.0-85156120604 7 9 2300112 en Advanced Electronic Materials © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf |
spellingShingle | Science::Physics Band Bending Scanning Tunneling Spectroscopy Yuan, Mengfei Zhang, Junqiu Yue, Xingyu Xia, Yipu Jin, Yuanjun Ho, Wingkin Xie, Maohai Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries |
title | Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries |
title_full | Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries |
title_fullStr | Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries |
title_full_unstemmed | Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries |
title_short | Substrate effect on band bending of MoSe₂ monolayer near mirror-twin domain boundaries |
title_sort | substrate effect on band bending of mose₂ monolayer near mirror twin domain boundaries |
topic | Science::Physics Band Bending Scanning Tunneling Spectroscopy |
url | https://hdl.handle.net/10356/170048 |
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