Spin-valley locking for in-gap quantum dots in a MoS₂ transistor

Spin-valley locking for in-gap quantum dots in a MoS₂ transistor

Spins confined to atomically thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom with spin-valley locking and potentially enhanced spin life an...

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Bibliographic Details
Main Authors: Krishnan, Radha, Biswas, Sangram, Hsueh, Yu-Ling, Ma, Hongyang, Rahman, Rajib, Weber, Bent
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2023
Subjects:
Physics
Quantum Dot
Coulomb Blockade
Online Access:https://hdl.handle.net/10356/170905

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