Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures
The remarkable electronic properties of two-dimensional van der Waals (vdW) materials make them promising platforms for next-generation spintronic devices. In this study, we demonstrate the room-temperature graphene lateral spin valve devices in the Fe3GaTe2/graphene full vdW heterostructure. The sp...
Main Authors: | , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2023
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/171446 |
_version_ | 1811691768059527168 |
---|---|
author | Pan, Haiyang Zhang, Chusheng Shi, Jiayu Hu, Xueqi Wang, Naizhou An, Liheng Duan, Ruihuan Deb, Pritam Liu, Zheng Gao, Weibo |
author2 | School of Physical and Mathematical Sciences |
author_facet | School of Physical and Mathematical Sciences Pan, Haiyang Zhang, Chusheng Shi, Jiayu Hu, Xueqi Wang, Naizhou An, Liheng Duan, Ruihuan Deb, Pritam Liu, Zheng Gao, Weibo |
author_sort | Pan, Haiyang |
collection | NTU |
description | The remarkable electronic properties of two-dimensional van der Waals (vdW) materials make them promising platforms for next-generation spintronic devices. In this study, we demonstrate the room-temperature graphene lateral spin valve devices in the Fe3GaTe2/graphene full vdW heterostructure. The spin transport channel is few-layer graphene, and room-temperature ferromagnet Fe3GaTe2 is used as both the spin injector and detector. Pronounced nonlocal spin valve signals can be observed when the magnetic field sweeps along the out-of-plane easy axis direction of Fe3GaTe2. This nonlocal spin valve signal persists even at 320 K, realizing a room-temperature lateral spin valve in full vdW heterostructure. Additionally, a significant magnitude nonlocal spin valve signal can be detected even with the low bias current of 1 μA. Furthermore, the magnetic field angle-dependent nonlocal measurements revealed that the nonlocal spin valve behavior is closely related to the robust large perpendicular magnetic anisotropy property of Fe3GaTe2. The nonlocal spin valve signal is prominent when the magnetic field is applied near the perpendicular direction and disappears under the in-plane magnetic field. These results demonstrate the potential of Fe3GaTe2 as a prospective candidate for constructing room-temperature, two-dimensional vdW spintronic devices. |
first_indexed | 2024-10-01T06:25:08Z |
format | Journal Article |
id | ntu-10356/171446 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T06:25:08Z |
publishDate | 2023 |
record_format | dspace |
spelling | ntu-10356/1714462023-10-25T00:14:15Z Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures Pan, Haiyang Zhang, Chusheng Shi, Jiayu Hu, Xueqi Wang, Naizhou An, Liheng Duan, Ruihuan Deb, Pritam Liu, Zheng Gao, Weibo School of Physical and Mathematical Sciences School of Materials Science and Engineering Center for Quantum Technologies, NUS The Photonics Institute Centre for Disruptive Photonic Technologies (CDPT) Engineering::Materials Lateral Spin Valve Spintronics Device The remarkable electronic properties of two-dimensional van der Waals (vdW) materials make them promising platforms for next-generation spintronic devices. In this study, we demonstrate the room-temperature graphene lateral spin valve devices in the Fe3GaTe2/graphene full vdW heterostructure. The spin transport channel is few-layer graphene, and room-temperature ferromagnet Fe3GaTe2 is used as both the spin injector and detector. Pronounced nonlocal spin valve signals can be observed when the magnetic field sweeps along the out-of-plane easy axis direction of Fe3GaTe2. This nonlocal spin valve signal persists even at 320 K, realizing a room-temperature lateral spin valve in full vdW heterostructure. Additionally, a significant magnitude nonlocal spin valve signal can be detected even with the low bias current of 1 μA. Furthermore, the magnetic field angle-dependent nonlocal measurements revealed that the nonlocal spin valve behavior is closely related to the robust large perpendicular magnetic anisotropy property of Fe3GaTe2. The nonlocal spin valve signal is prominent when the magnetic field is applied near the perpendicular direction and disappears under the in-plane magnetic field. These results demonstrate the potential of Fe3GaTe2 as a prospective candidate for constructing room-temperature, two-dimensional vdW spintronic devices. National Research Foundation (NRF) The research was supported by the Competitive Research Program of Singapore National Research Foundation (CRP Award Nos. NRF-CRP22-2019-0004 and NRF-CRP23-2019-0002). H.P. thanks the National Natural Science Foundation of China (Grant No. 12104391) and the program of the China Scholarships Council (File No. 202008440015) for the financial support. 2023-10-25T00:14:14Z 2023-10-25T00:14:14Z 2023 Journal Article Pan, H., Zhang, C., Shi, J., Hu, X., Wang, N., An, L., Duan, R., Deb, P., Liu, Z. & Gao, W. (2023). Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures. ACS Materials Letters, 5(8), 2226-2232. https://dx.doi.org/10.1021/acsmaterialslett.3c00510 2639-4979 https://hdl.handle.net/10356/171446 10.1021/acsmaterialslett.3c00510 2-s2.0-85166767182 8 5 2226 2232 en NRF-CRP22-2019-0004 NRF-CRP23-2019-0002 ACS Materials Letters © 2023 American Chemical Society. All rights reserved. |
spellingShingle | Engineering::Materials Lateral Spin Valve Spintronics Device Pan, Haiyang Zhang, Chusheng Shi, Jiayu Hu, Xueqi Wang, Naizhou An, Liheng Duan, Ruihuan Deb, Pritam Liu, Zheng Gao, Weibo Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures |
title | Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures |
title_full | Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures |
title_fullStr | Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures |
title_full_unstemmed | Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures |
title_short | Room-temperature lateral spin valve in graphene/Fe₃GaTe₂ van der Waals heterostructures |
title_sort | room temperature lateral spin valve in graphene fe₃gate₂ van der waals heterostructures |
topic | Engineering::Materials Lateral Spin Valve Spintronics Device |
url | https://hdl.handle.net/10356/171446 |
work_keys_str_mv | AT panhaiyang roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT zhangchusheng roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT shijiayu roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT huxueqi roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT wangnaizhou roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT anliheng roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT duanruihuan roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT debpritam roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT liuzheng roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures AT gaoweibo roomtemperaturelateralspinvalveingraphenefe3gate2vanderwaalsheterostructures |