Simulation of post-breakdown transistor performance in ultrathin gate dielectrics-based nanoscale MOSFETs
The purpose of this project is to simulate the post-breakdown transistor performance in ultrathin gate dielectric. The simulator used was TSUPREM-4 and MEDICI, which is widely used in the semiconductor industry for simulation and analyze semiconductor processing. The simulation was done on a 0.13μm...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/17188 |