Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator
The growth and characterization of (101¯1 ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in co...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Online Access: | https://hdl.handle.net/10356/172511 |
| _version_ | 1826112648420261888 |
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| author | Wannous, Beatrice Coulon, Pierre-Marie Dupré, Ludovic Rol, Fabian Rochat, Névine Zúñiga-Pérez, Jesús Vennéguès, Philippe Feuillet, Guy Templier, François |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Wannous, Beatrice Coulon, Pierre-Marie Dupré, Ludovic Rol, Fabian Rochat, Névine Zúñiga-Pérez, Jesús Vennéguès, Philippe Feuillet, Guy Templier, François |
| author_sort | Wannous, Beatrice |
| collection | NTU |
| description | The growth and characterization of (101¯1 ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in continuous and uniform stripes with small height variations that cause the formation of chevrons. Three coalescence strategies are tested to improve surface morphology and optical quality. Scanning electron microscopy identifies no crack formation but undulations of the surface. A roughness of ≈10 nm is measured by atomic force microscopy on large areas. The impact of MQW growth temperature shows similar surface morphology in terms of undulations and roughness. Room temperature photoluminescence spectra show wavelength emission redshifting when decreasing the MQW growth temperature. Room-temperature cathodoluminescence (CL) highlights first the presence of threading dislocations (TDs) in between the coalescence boundary despite the use of the ART technique. Second, CL shows a spatially homogeneous emission wavelength of around 485 nm only perturbed by lower-wavelength emission (455 nm) arising from the chevrons. Blue LED structures exhibit uniform emission wavelength at 450 nm, having a crack-free surface, and roughness of ≈5 nm. These results pave the way for the fabrication of semipolar micro-LEDs on SOI substrates. |
| first_indexed | 2024-10-01T03:10:31Z |
| format | Journal Article |
| id | ntu-10356/172511 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:10:31Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1725112023-12-18T15:34:47Z Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator Wannous, Beatrice Coulon, Pierre-Marie Dupré, Ludovic Rol, Fabian Rochat, Névine Zúñiga-Pérez, Jesús Vennéguès, Philippe Feuillet, Guy Templier, François School of Physical and Mathematical Sciences MajuLab, International Research Laboratory IRL 3654, Sorbonne Université, National University of Singapore, Nanyang Technological University Science::Physics Light-Emitting Diodes Silicon-on-Insulator Substrates The growth and characterization of (101¯1 ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in continuous and uniform stripes with small height variations that cause the formation of chevrons. Three coalescence strategies are tested to improve surface morphology and optical quality. Scanning electron microscopy identifies no crack formation but undulations of the surface. A roughness of ≈10 nm is measured by atomic force microscopy on large areas. The impact of MQW growth temperature shows similar surface morphology in terms of undulations and roughness. Room temperature photoluminescence spectra show wavelength emission redshifting when decreasing the MQW growth temperature. Room-temperature cathodoluminescence (CL) highlights first the presence of threading dislocations (TDs) in between the coalescence boundary despite the use of the ART technique. Second, CL shows a spatially homogeneous emission wavelength of around 485 nm only perturbed by lower-wavelength emission (455 nm) arising from the chevrons. Blue LED structures exhibit uniform emission wavelength at 450 nm, having a crack-free surface, and roughness of ≈5 nm. These results pave the way for the fabrication of semipolar micro-LEDs on SOI substrates. Published version 2023-12-12T05:23:09Z 2023-12-12T05:23:09Z 2023 Journal Article Wannous, B., Coulon, P., Dupré, L., Rol, F., Rochat, N., Zúñiga-Pérez, J., Vennéguès, P., Feuillet, G. & Templier, F. (2023). Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator. Physica Status Solidi (B) Basic Research, 260(8), 2200582-. https://dx.doi.org/10.1002/pssb.202200582 0370-1972 https://hdl.handle.net/10356/172511 10.1002/pssb.202200582 2-s2.0-85150033643 8 260 2200582 en Physica Status Solidi (B) Basic Research © 2023 The Authors. physica status solidi (b) basic solid state physics published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf |
| spellingShingle | Science::Physics Light-Emitting Diodes Silicon-on-Insulator Substrates Wannous, Beatrice Coulon, Pierre-Marie Dupré, Ludovic Rol, Fabian Rochat, Névine Zúñiga-Pérez, Jesús Vennéguès, Philippe Feuillet, Guy Templier, François Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator |
| title | Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator |
| title_full | Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator |
| title_fullStr | Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator |
| title_full_unstemmed | Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator |
| title_short | Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator |
| title_sort | growth of 101¯1 semipolar gan based light emitting diode structures on silicon on insulator |
| topic | Science::Physics Light-Emitting Diodes Silicon-on-Insulator Substrates |
| url | https://hdl.handle.net/10356/172511 |
| work_keys_str_mv | AT wannousbeatrice growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT coulonpierremarie growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT dupreludovic growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT rolfabian growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT rochatnevine growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT zunigaperezjesus growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT venneguesphilippe growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT feuilletguy growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator AT templierfrancois growthof1011semipolarganbasedlightemittingdiodestructuresonsilicononinsulator |