Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction
The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/172512 |
| _version_ | 1811688692627013632 |
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| author | Du, Jingxue Yang, Jing Fan, Weijun Shi, Lijie |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Du, Jingxue Yang, Jing Fan, Weijun Shi, Lijie |
| author_sort | Du, Jingxue |
| collection | NTU |
| description | The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices. |
| first_indexed | 2024-10-01T05:36:15Z |
| format | Journal Article |
| id | ntu-10356/172512 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:36:15Z |
| publishDate | 2023 |
| record_format | dspace |
| spelling | ntu-10356/1725122023-12-12T05:51:47Z Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction Du, Jingxue Yang, Jing Fan, Weijun Shi, Lijie School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Phase Transition Band Offset The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices. The research work is supported by the National Natural Science Foundation of China (Grant Nos. 12174023, 12074037). 2023-12-12T05:51:47Z 2023-12-12T05:51:47Z 2023 Journal Article Du, J., Yang, J., Fan, W. & Shi, L. (2023). Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction. Physics Letters A, 478, 128922-. https://dx.doi.org/10.1016/j.physleta.2023.128922 0375-9601 https://hdl.handle.net/10356/172512 10.1016/j.physleta.2023.128922 2-s2.0-85160406427 478 128922 en Physics Letters A © 2023 Elsevier B.V. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Phase Transition Band Offset Du, Jingxue Yang, Jing Fan, Weijun Shi, Lijie Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction |
| title | Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction |
| title_full | Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction |
| title_fullStr | Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction |
| title_full_unstemmed | Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction |
| title_short | Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction |
| title_sort | electric field induced semiconductor semimetal phase transition of gete snse van der waals heterojunction |
| topic | Engineering::Electrical and electronic engineering Phase Transition Band Offset |
| url | https://hdl.handle.net/10356/172512 |
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