Fabrication of tin dioxide on silicon doxide substrate using Filtered Cathodic Vacuum Arc (FCVA) technique
Tin dioxide has been reported to be a direct band gap semiconductor with broad applications. Transparent polycrystalline tin dioxide (SnO2) film grown using FCVA technique has an energy band gap of 3.59eV, uniform thickness, high mechanical strength and outstanding transparency. These unique prope...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/17267 |